Reference Only

SQ1912AEEH-T1_GE3

MOSFETs N Ch 20Vds 12Vgs AEC-Q101 Qualified.

Manufacturer:

Mfr Part:
SQ1912AEEH-T1_GE3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseSOT-363-6
Transistor PolarityN-Channel
Number of Channels2 Channel
Vds - Drain-Source Breakdown Voltage20 V
Id - Continuous Drain Current800 mA
Rds On - Drain-Source Resistance200 mOhms
Vgs - Gate-Source Voltage- 12 V, 12 V
Vgs th - Gate-Source Threshold Voltage450 mV
Qg - Gate Charge1.25 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation1.5 W
Channel ModeEnhancement
QualificationAEC-Q101
TradenameTrenchFET
PackagingReel
ConfigurationDual
Fall Time390 ns
Forward Transconductance - Min2.6 S
Product TypeMOSFETs
Rise Time108 ns
SeriesSQ
SubcategoryTransistors
Transistor Type2 N-Channel
Typical Turn-Off Delay Time715 ns
Typical Turn-On Delay Time66 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541210000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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