Reference Only

SQ1912EH-T1_GE3

MOSFETs 20V Vds 0.8A Id AEC-Q101 Qualified.

Manufacturer:

Mfr Part:
SQ1912EH-T1_GE3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseSOT-363-6
Transistor PolarityN-Channel
Number of Channels2 Channel
Vds - Drain-Source Breakdown Voltage20 V
Id - Continuous Drain Current800 mA
Rds On - Drain-Source Resistance200 mOhms, 200 mOhms
Vgs - Gate-Source Voltage- 12 V, 12 V
Vgs th - Gate-Source Threshold Voltage450 mV
Qg - Gate Charge1.15 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation1.5 W
Channel ModeEnhancement
QualificationAEC-Q101
TradenameTrenchFET
PackagingReel
ConfigurationDual
Fall Time17 ns, 17 ns
Forward Transconductance - Min2.6 S, 2.6 S
Product TypeMOSFETs
Rise Time21 ns, 21 ns
SeriesSQ
SubcategoryTransistors
Transistor Type2 N-Channel
Typical Turn-Off Delay Time19 ns, 19 ns
Typical Turn-On Delay Time3 ns, 3 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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