Reference Only

SQ1922EEH-T1_GE3

MOSFETs 20V Vds Dual N-Ch AEC-Q101 Qualified.

Manufacturer:

Mfr Part:
SQ1922EEH-T1_GE3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseSC-70-6
Transistor PolarityN-Channel
Number of Channels2 Channel
Vds - Drain-Source Breakdown Voltage20 V
Id - Continuous Drain Current840 mA
Rds On - Drain-Source Resistance350 mOhms
Vgs - Gate-Source Voltage- 12 V, 12 V
Vgs th - Gate-Source Threshold Voltage1 V
Qg - Gate Charge700 pC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation1.5 W
Channel ModeEnhancement
QualificationAEC-Q101
TradenameTrenchFET
PackagingReel
ConfigurationDual
Fall Time6 ns
Product TypeMOSFETs
Rise Time12 ns
SeriesSQ
SubcategoryTransistors
Typical Turn-Off Delay Time15 ns
Typical Turn-On Delay Time10 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541100000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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(Minimum: 3.000 / Multiples: 1)
Quantity Unit PriceExt. Price
0,178 €534,00 €
0,163 €978,00 €
0,151 €1.359,00 €
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