Reference Only

SQD10N30-330H_GE3

MOSFETs N Ch 300Vds 30Vgs AEC-Q101 Qualified.

Manufacturer:

Mfr Part:
SQD10N30-330H_GE3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseDPAK-3 (TO-252-3)
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage300 V
Id - Continuous Drain Current10 A
Rds On - Drain-Source Resistance275 mOhms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage3.4 V
Qg - Gate Charge47 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation107 W
Channel ModeEnhancement
QualificationAEC-Q101
TradenameTrenchFET
PackagingReel
ConfigurationSingle
Fall Time8 ns
Forward Transconductance - Min26 S
Product TypeMOSFETs
Rise Time18 ns
SeriesSQD
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time20 ns
Typical Turn-On Delay Time10 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

0In Stock

Available For Backorder
Please adjust quantity to minimum and multiple values.
Quantity
---
Unit Price
---
Ext. Price
---

Reel

(Minimum: 2.000 / Multiples: 1)
Quantity Unit PriceExt. Price
0,596 €1.192,00 €
Need more?
Contact Us