Reference Only

SQD50P08-28-T4_GE3

MOSFETs -80V Vds 20V Vgs TO-252.

Manufacturer:

Mfr Part:
SQD50P08-28-T4_GE3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseDPAK-3 (TO-252-3)
Transistor PolarityP-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage80 V
Id - Continuous Drain Current48 A
Rds On - Drain-Source Resistance28 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage3.5 V
Qg - Gate Charge145 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation136 W
Channel ModeEnhancement
QualificationAEC-Q101
TradenameTrenchFET
ConfigurationSingle
Fall Time16 ns
Forward Transconductance - Min32 S
Product TypeMOSFETs
Rise Time11 ns
SeriesSQD
SubcategoryTransistors
Transistor Type1 P-Channel
Typical Turn-Off Delay Time65 ns
Typical Turn-On Delay Time15 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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