Reference Only

SQJ200EP-T1_GE3

MOSFETs Dual N Ch 20V Vds AEC-Q101 Qualified.

Manufacturer:

Mfr Part:
SQJ200EP-T1_GE3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CasePowerPAK-SO-8-4
Transistor PolarityN-Channel
Number of Channels2 Channel
Vds - Drain-Source Breakdown Voltage20 V
Id - Continuous Drain Current20 A, 60 A
Rds On - Drain-Source Resistance7.4 mOhms, 3.1 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage1 V
Qg - Gate Charge18 nC, 43 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation27 W, 48 W
Channel ModeEnhancement
QualificationAEC-Q101
TradenameTrenchFET
PackagingReel
ConfigurationDual
Fall Time13 ns, 14 ns
Forward Transconductance - Min55 S, 60 S
Product TypeMOSFETs
Rise Time18 ns, 17 ns
SeriesSQJ
SubcategoryTransistors
Transistor Type2 N-Channel
Typical Turn-Off Delay Time13 ns, 19 ns
Typical Turn-On Delay Time4 ns, 7 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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