Reference Only

SQJ202EP-T1_GE3

MOSFETs Dual N Ch 12V Vds AEC-Q101 Qualified.

Manufacturer:

Mfr Part:
SQJ202EP-T1_GE3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CasePowerPAK-SO-8-4
Transistor PolarityN-Channel
Number of Channels2 Channel
Vds - Drain-Source Breakdown Voltage12 V
Id - Continuous Drain Current20 A, 60 A
Rds On - Drain-Source Resistance5.2 mOhms, 2.5 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage1 V
Qg - Gate Charge22 nC, 54 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation27 W, 48 W
Channel ModeEnhancement
QualificationAEC-Q101
TradenameTrenchFET
PackagingReel
ConfigurationDual
Fall Time2.6 ns, 5 ns
Forward Transconductance - Min49 S, 91 S
Product TypeMOSFETs
Rise Time3.2 ns, 4.5 ns
SeriesSQJ
SubcategoryTransistors
Transistor Type2 N-Channel
Typical Turn-Off Delay Time20 ns, 28 ns
Typical Turn-On Delay Time8.8 ns, 10.7 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541210000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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0,529 €1.587,00 €
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