Reference Only

SQJ262EP-T1_GE3

MOSFETs Dual 60V Vds Asymtrc AEC-Q101 Qualified.

Manufacturer:

Mfr Part:
SQJ262EP-T1_GE3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CasePowerPAK-SO-8-4
Transistor PolarityN-Channel
Number of Channels2 Channel
Vds - Drain-Source Breakdown Voltage60 V
Id - Continuous Drain Current15 A, 40 A
Rds On - Drain-Source Resistance29.5 mOhms, 12.6 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage2.5 V
Qg - Gate Charge6.5 nC, 14.5 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation27 W, 48 W
Channel ModeEnhancement
QualificationAEC-Q101
TradenameTrenchFET
PackagingReel
ConfigurationDual
Fall Time10 ns
Product TypeMOSFETs
Rise Time3 ns
SeriesSQJ
SubcategoryTransistors
Transistor Type2 N-Channel
Typical Turn-Off Delay Time15 ns , 23 ns
Typical Turn-On Delay Time9 ns , 13 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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