Reference Only

SQJ403EP-T1_GE3

MOSFETs P Ch -30Vds 20Vgs AEC-Q101 Qualified.

Manufacturer:

Mfr Part:
SQJ403EP-T1_GE3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CasePowerPAK-SO-8-4
Transistor PolarityP-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage30 V
Id - Continuous Drain Current30 A
Rds On - Drain-Source Resistance7 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage2.5 V
Qg - Gate Charge109 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation68 W
Channel ModeEnhancement
QualificationAEC-Q101
TradenameTrenchFET
PackagingReel
ConfigurationSingle
Fall Time20 ns
Forward Transconductance - Min32 S
Product TypeMOSFETs
Rise Time146 ns
SeriesSQJ
SubcategoryTransistors
Transistor Type1 P-Channel
Typical Turn-Off Delay Time57 ns
Typical Turn-On Delay Time20 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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Quantity Unit PriceExt. Price
0,663 €1.989,00 €
0,638 €3.828,00 €
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