Reference Only

SQJ415EP-T1_GE3

MOSFETs -40V Vds; +/-20V Vgs PowerPAK SO-8L.

Manufacturer:

Mfr Part:
SQJ415EP-T1_GE3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CasePowerPAK-SO-8-4
Transistor PolarityP-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage40 V
Id - Continuous Drain Current30 A
Rds On - Drain-Source Resistance14 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage2.5 V
Qg - Gate Charge95 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation45 W
Channel ModeEnhancement
PackagingReel
ConfigurationSingle
Fall Time17 ns
Forward Transconductance - Min37 S
Product TypeMOSFETs
Rise Time4 ns
SeriesSQJ
SubcategoryTransistors
Typical Turn-Off Delay Time67 ns
Typical Turn-On Delay Time12 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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Lead Time: 5 Weeks
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Reel

(Minimum: 3.000 / Multiples: 1)
Quantity Unit PriceExt. Price
0,373 €1.119,00 €
0,362 €2.172,00 €
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