Reference Only

SQJ418EP-T1_GE3

MOSFETs N Ch 100Vds 20Vgs AEC-Q101 Qualified.

Manufacturer:

Mfr Part:
SQJ418EP-T1_GE3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CasePowerPAK-SO-8-4
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage100 V
Id - Continuous Drain Current48 A
Rds On - Drain-Source Resistance11 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage2.5 V
Qg - Gate Charge35 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation68 W
Channel ModeEnhancement
QualificationAEC-Q101
PackagingReel
ConfigurationSingle
Fall Time19 ns
Forward Transconductance - Min31 S
Product TypeMOSFETs
Rise Time19 ns
SeriesSQJ
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time16 ns
Typical Turn-On Delay Time9 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

0In Stock

Available For Backorder
Lead Time: 30 Weeks
Please adjust quantity to minimum and multiple values.
Quantity
---
Unit Price
---
Ext. Price
---

Reel

(Minimum: 3.000 / Multiples: 1)
Quantity Unit PriceExt. Price
0,456 €1.368,00 €
0,439 €2.634,00 €
0,43 €3.870,00 €
Need more?