Reference Only

SQJ872EP-T1_GE3

MOSFETs 150V Vds 20V Vgs PowerPAK SO-8L.

Manufacturer:

Mfr Part:
SQJ872EP-T1_GE3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CasePowerPAK-SO-8-4
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage150 V
Id - Continuous Drain Current24.5 A
Rds On - Drain-Source Resistance35.5 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage2.5 V
Qg - Gate Charge14 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation55 W
Channel ModeEnhancement
TradenamePowerPAK
PackagingReel
ConfigurationSingle
Fall Time8 ns
Forward Transconductance - Min16 S
Product TypeMOSFETs
Rise Time4 ns
SeriesSQJ
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time19 ns
Typical Turn-On Delay Time9 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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0,529 €3.174,00 €
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