Reference Only

SQJ990EP-T1_GE3

MOSFETs Dual N-Ch 100V Vds AEC-Q101 Qualified.

Manufacturer:

Mfr Part:
SQJ990EP-T1_GE3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CasePowerPAK-SO-8L-4
Transistor PolarityN-Channel
Number of Channels2 Channel
Vds - Drain-Source Breakdown Voltage100 V
Id - Continuous Drain Current17 A, 34 A
Rds On - Drain-Source Resistance32.5 mOhms, 15.4 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage1.5 V
Qg - Gate Charge15 nC, 30 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation27 W, 48 W
Channel ModeEnhancement
QualificationAEC-Q101
TradenameTrenchFET
PackagingReel
ConfigurationDual
Fall Time21 ns, 22 ns
Forward Transconductance - Min17 S, 34 S
Product TypeMOSFETs
Rise Time3 ns, 3 ns
SeriesSQJ
SubcategoryTransistors
Transistor Type2 N-Channel
Typical Turn-Off Delay Time22 ns, 28 ns
Typical Turn-On Delay Time8 ns, 12 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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