Reference Only

SQJB70EP-T1_GE3

MOSFETs Dual N-Ch 100V AEC-Q101 Qualified.

Manufacturer:

Mfr Part:
SQJB70EP-T1_GE3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CasePowerPAK-SO-8-4
Transistor PolarityN-Channel
Number of Channels2 Channel
Vds - Drain-Source Breakdown Voltage100 V
Id - Continuous Drain Current11.3 A
Rds On - Drain-Source Resistance78 mOhms
Vgs - Gate-Source Voltage20 V
Vgs th - Gate-Source Threshold Voltage3 V
Qg - Gate Charge7 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation27 W
Channel ModeEnhancement
QualificationAEC-Q101
TradenameTrenchFET
PackagingReel
ConfigurationDual
Fall Time5 ns
Product TypeMOSFETs
Rise Time5 ns
SeriesSQJB
SubcategoryTransistors
Transistor Type2 N-Channel
Typical Turn-Off Delay Time13 ns
Typical Turn-On Delay Time9 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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Reel

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