Reference Only

SQJB80EP-T1_GE3

MOSFETs 80V Vds 30A Id AEC-Q101 Qualified.

Manufacturer:

Mfr Part:
SQJB80EP-T1_GE3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CasePowerPAK-SO-8-4
Transistor PolarityN-Channel
Number of Channels2 Channel
Vds - Drain-Source Breakdown Voltage80 V
Id - Continuous Drain Current30 A
Rds On - Drain-Source Resistance15.5 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage1.5 V
Qg - Gate Charge32 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation48 W
Channel ModeEnhancement
QualificationAEC-Q101
TradenameTrenchFET
PackagingReel
ConfigurationDual
Fall Time24 ns
Forward Transconductance - Min29 S
Product TypeMOSFETs
Rise Time3 ns
SeriesSQJB
SubcategoryTransistors
Transistor Type2 N-Channel
Typical Turn-Off Delay Time23 ns
Typical Turn-On Delay Time10 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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