Reference Only

SQM120N10-3M8_GE3

MOSFETs N-Channel 100V AEC-Q101 Qualified.

Manufacturer:

Mfr Part:
SQM120N10-3M8_GE3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseD2PAK-3 (TO-263-3)
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage100 V
Id - Continuous Drain Current120 A
Rds On - Drain-Source Resistance3 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage2.5 V
Qg - Gate Charge190 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation375 W
Channel ModeEnhancement
QualificationAEC-Q101
TradenameTrenchFET
PackagingReel
ConfigurationSingle
Fall Time12 ns
Forward Transconductance - Min82 S
Product TypeMOSFETs
Rise Time110 ns
SeriesSQM
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time40 ns
Typical Turn-On Delay Time16 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

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