Reference Only

SQS182ELNW-T1_GE3

MOSFETs .

Manufacturer:

Mfr Part:
SQS182ELNW-T1_GE3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CasePowerPAK-8
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage80 V
Id - Continuous Drain Current45 A
Rds On - Drain-Source Resistance15.6 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage2.5 V
Qg - Gate Charge26 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation65 W
Channel ModeEnhancement
PackagingReel
ConfigurationSingle
Fall Time6 ns
Forward Transconductance - Min65 S
Product TypeMOSFETs
Rise Time4 ns
SeriesSQS
SubcategoryTransistors
Transistor Type1 N- Channel
Typical Turn-Off Delay Time23 ns
Typical Turn-On Delay Time10 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantRoHS Per Exemption
RoHS Per Exemption
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

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Lead Time: 12 Weeks
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(Minimum: 3.000 / Multiples: 1)
Quantity Unit PriceExt. Price
0,334 €1.002,00 €
0,317 €1.902,00 €
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