Reference Only

SQS482ENW-T1_GE3

MOSFETs 30V Vds -/+20V Vgs PowerPAK 1212-8W.

Manufacturer:

Mfr Part:
SQS482ENW-T1_GE3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CasePowerPAK-1212-8W-8
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage30 V
Id - Continuous Drain Current16 A
Rds On - Drain-Source Resistance7 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage2 V
Qg - Gate Charge26 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation62 W
Channel ModeEnhancement
TradenameTrenchFET
PackagingReel
ConfigurationSingle
Fall Time18 ns
Product TypeMOSFETs
Rise Time21 ns
SeriesSQS
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time49 ns
Typical Turn-On Delay Time7 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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