Reference Only

SQS840EN-T1_GE3

MOSFETs 40V 12A 33W AEC-Q101 Qualified.

Manufacturer:

Mfr Part:
SQS840EN-T1_GE3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CasePowerPAK-1212-8
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage40 V
Id - Continuous Drain Current12 A
Rds On - Drain-Source Resistance13.8 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage1.5 V
Qg - Gate Charge22.5 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation33 W
Channel ModeEnhancement
QualificationAEC-Q101
TradenameTrenchFET
PackagingReel
ConfigurationSingle
Fall Time6.4 ns
Forward Transconductance - Min31 S
Product TypeMOSFETs
Rise Time9.4 ns
SeriesSQS
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time21.6 ns
Typical Turn-On Delay Time7.6 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541210000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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0,342 €1.026,00 €
0,328 €1.968,00 €
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