Reference Only

SQSA12CENW-T1_GE3

MOSFETs .

Manufacturer:

Mfr Part:
SQSA12CENW-T1_GE3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CasePowerPAK-1212-8W
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage100 V
Id - Continuous Drain Current18 A
Rds On - Drain-Source Resistance22 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage2.5 V
Qg - Gate Charge31 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation62.5 W
Channel ModeEnhancement
TradenameTrenchFET
PackagingReel
ConfigurationSingle
Fall Time9 ns
Forward Transconductance - Min47 S
Product TypeMOSFETs
Rise Time4 ns
SeriesSQS
SubcategoryTransistors
Transistor TypeTrenchFET Power MOSFET
Typical Turn-Off Delay Time25 ns
Typical Turn-On Delay Time11 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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Lead Time: 29 Weeks
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0,355 €1.065,00 €
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