Reference Only

SSM6L820R,LXHF

MOSFETs AUTO AEC-Q SS MOS N-ch + P-ch Low Voltage Gate Drive VDSS:30V IC:4A PD:1.5W TSOP6F.

Manufacturer:

Mfr Part:
SSM6L820R,LXHF

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerToshiba
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseTSOP6F
Transistor PolarityN-Channel, P-Channel
Number of Channels2 Channel
Vds - Drain-Source Breakdown Voltage30 V
Id - Continuous Drain Current4 A
Rds On - Drain-Source Resistance39.1 mOhms, 45 mOhms
Vgs - Gate-Source Voltage- 8 V, 12 V
Vgs th - Gate-Source Threshold Voltage1 V
Qg - Gate Charge6.7 nC
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation1.4 W
Channel ModeEnhancement
QualificationAEC-Q101
PackagingReel
ConfigurationDual
Product TypeMOSFETs
SubcategoryTransistors
Typical Turn-Off Delay Time17 ns
Typical Turn-On Delay Time26 ns
Part # AliasesSSM6L820R,LXHF(B

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

0In Stock

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Lead Time: 15 Weeks
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Reel

(Minimum: 3.000 / Multiples: 1)
Quantity Unit PriceExt. Price
0,213 €639,00 €
0,195 €1.170,00 €
0,186 €1.674,00 €
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