Reference Only
SSM6L820R,LXHF
MOSFETs AUTO AEC-Q SS MOS N-ch + P-ch Low Voltage Gate Drive VDSS:30V IC:4A PD:1.5W TSOP6F.
Datasheet
SSM6L820R,LXHF DatasheetSpecifications
| Description | Product Attribute | Similar |
|---|---|---|
| Manufacturer | Toshiba | |
| Product Category | MOSFETs | |
| Technology | Si | |
| Mounting Style | SMD/SMT | |
| Package / Case | TSOP6F | |
| Transistor Polarity | N-Channel, P-Channel | |
| Number of Channels | 2 Channel | |
| Vds - Drain-Source Breakdown Voltage | 30 V | |
| Id - Continuous Drain Current | 4 A | |
| Rds On - Drain-Source Resistance | 39.1 mOhms, 45 mOhms | |
| Vgs - Gate-Source Voltage | - 8 V, 12 V | |
| Vgs th - Gate-Source Threshold Voltage | 1 V | |
| Qg - Gate Charge | 6.7 nC | |
| Maximum Operating Temperature | + 150 C | |
| Pd - Power Dissipation | 1.4 W | |
| Channel Mode | Enhancement | |
| Qualification | AEC-Q101 | |
| Packaging | Reel | |
| Configuration | Dual | |
| Product Type | MOSFETs | |
| Subcategory | Transistors | |
| Typical Turn-Off Delay Time | 17 ns | |
| Typical Turn-On Delay Time | 26 ns | |
| Part # Aliases | SSM6L820R,LXHF(B |
Export and Environmental Classification
| Attribute | Description |
|---|---|
| ECCN | EAR99 |
| HTS | 8541290065 |
| TARIC | 8541290000 |
| RoHS Compliant | Yes RoHS Compliant |
| RoHS Exemption Number | N/A |
| Lead(PB) in Terminals | Call to Verify PB |
| REACH SVHC | No |
| REACH Substance Name | N/A |
Documents
Datasheet
Test/Quality Data
0In Stock
Available For Backorder
Lead Time: 15 Weeks
Quantity
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Unit Price
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Ext. Price
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Reel
(Minimum: 3.000 / Multiples: 1)| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 0,213 € | 639,00 € | |
| 0,195 € | 1.170,00 € | |
| 0,186 € | 1.674,00 € |
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