Reference Only

SSM6N813R,LXHF

MOSFETs AUTO AEC-Q SS MOS Dual N-ch Low drain-source on-resistance VDSS:100V ID:3.5A PD:1.5W TSOP6F.

Manufacturer:

Mfr Part:
SSM6N813R,LXHF

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerToshiba
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseTSOP6F
Transistor PolarityN-Channel
Number of Channels2 Channel
Vds - Drain-Source Breakdown Voltage100 V
Id - Continuous Drain Current3.5 A
Rds On - Drain-Source Resistance88 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage2.5 V
Qg - Gate Charge3.6 nC
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation1.5 W
Channel ModeEnhancement
QualificationAEC-Q101
PackagingReel
ConfigurationDual
Product TypeMOSFETs
SeriesU-MOSVIII-H
SubcategoryTransistors
Typical Turn-Off Delay Time670 ns
Typical Turn-On Delay Time360 ns
Part # AliasesSSM6N813R,LXHF(B

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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0,265 €795,00 €
0,248 €1.488,00 €
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