Reference Only

TRS12E65H,S1Q

SiC Schottky Diodes G3 SiC-SBD 650V 12A TO-220-2L.

Manufacturer:

Mfr Part:
TRS12E65H,S1Q

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerToshiba
Product CategorySiC Schottky Diodes
Mounting StyleThrough Hole
Package / CaseTO-220-2L
If - Forward Current12 A
Vrrm - Repetitive Reverse Voltage650 V
Vf - Forward Voltage1.2 V
Ifsm - Forward Surge Current640 A
Ir - Reverse Current2.4 uA
PackagingTube
Pd - Power Dissipation107 W
Product TypeSiC Schottky Diodes
SubcategoryDiodes & Rectifiers

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541100080
TARIC8541100000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

0In Stock

Available For Backorder
Lead Time: 26 Weeks
Please adjust quantity to minimum and multiple values.
Quantity
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Unit Price
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Ext. Price
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Tube

(Minimum: 50 / Multiples: 1)
Quantity Unit PriceExt. Price
2,69 €134,50 €
2,26 €226,00 €
1,52 €760,00 €
1,46 €1.460,00 €
1,43 €7.150,00 €
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