Reference Only

TTA008B,Q

Bipolar Transistors - BJT .

Manufacturer:

Mfr Part:
TTA008B,Q

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerToshiba
Product CategoryBipolar Transistors - BJT
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-126N-3
Transistor PolarityPNP
ConfigurationSingle
Maximum DC Collector Current4 A
Collector- Emitter Voltage VCEO Max80 V
Collector- Base Voltage VCBO80 V
Emitter- Base Voltage VEBO7 V
Collector-Emitter Saturation Voltage300 mV
Maximum DC Collector Current4 A
Pd - Power Dissipation1.5 W
Gain Bandwidth Product fT100 MHz
Maximum Operating Temperature+ 150 C
SeriesTTA008B
PackagingTray
Continuous Collector Current- 2 A
DC Collector/Base Gain hfe Min100
DC Current Gain hFE Max200
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541210000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

0In Stock

Available For Backorder
Lead Time: 17 Weeks
Please adjust quantity to minimum and multiple values.
Quantity
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Unit Price
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Ext. Price
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Tray

(Minimum: 250 / Multiples: 1)
Quantity Unit PriceExt. Price
0,349 €87,25 €
0,34 €170,00 €
0,259 €259,00 €
0,255 €637,50 €
0,231 €1.155,00 €
0,215 €2.150,00 €
0,207 €5.175,00 €
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