Reference Only

TTC012(Q)

Obsolete
Bipolar Transistors - BJT NPN PWR Amp Trans 2A IC 3A ICP 800V

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Mfr Part:
TTC012(Q)

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerToshiba
Product CategoryBipolar Transistors - BJT
TechnologySi
Mounting StyleThrough Hole
Transistor PolarityNPN
ConfigurationSingle
Maximum DC Collector Current2 A
Collector- Emitter Voltage VCEO Max375 V
Collector- Base Voltage VCBO800 V
Emitter- Base Voltage VEBO8 V
Collector-Emitter Saturation Voltage500 mV
Maximum DC Collector Current2 A
Pd - Power Dissipation1.1 W
Maximum Operating Temperature+ 150 C
SeriesTTC012
PackagingTube
DC Collector/Base Gain hfe Min80 at 1 mA, 5 V
DC Current Gain hFE Max250 at 1 mA, 5 V
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541210000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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