Reference Only

VS-ETF150Y65N

Obsolete
IGBT Modules 650V Vces 150A Ic 3 Levels Half-Bridge

Manufacturer:

Mfr Part:
VS-ETF150Y65N

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryIGBT Modules
ProductIGBT Modules
ConfigurationHalf Bridge
Collector- Emitter Voltage VCEO Max650 V
Collector-Emitter Saturation Voltage1.7 V
Continuous Collector Current at 25 C201 A
Gate-Emitter Leakage Current600 nA
Pd - Power Dissipation600 W
Package / CaseEMIPAK-2B
Maximum Operating Temperature+ 175 C
PackagingTube
Maximum Gate Emitter Voltage20 V
Mounting StyleScrew Mount
Product TypeIGBT Modules
SubcategoryIGBTs
TechnologySi

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

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