Reference Only

XP10N8R8I

MOSFETs N-CH SINGLE 100V TO220CFM

Manufacturer:

Mfr Part:
XP10N8R8I

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerYAGEO
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-220CFM-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage100 V
Id - Continuous Drain Current45 A
Rds On - Drain-Source Resistance8.8 mOhms
Vgs - Gate-Source Voltage20 V
Vgs th - Gate-Source Threshold Voltage5 V
Qg - Gate Charge105.6 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation1.92 W
Channel ModeEnhancement
PackagingTube
ConfigurationSingle
Fall Time94 ns
Forward Transconductance - Min36 S
Product TypeMOSFETs
Rise Time100 ns
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time52 ns
Typical Turn-On Delay Time25 ns

Export and Environmental Classification

AttributeDescription
TARIC8541290000
RoHS CompliantCall to Verify RoHS
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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