Reference Only

XP2535GEY

MOSFETs N+P MOS 20V 4.6/-3.1A 32/80mOhms.

Manufacturer:

Mfr Part:
XP2535GEY

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerYAGEO
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseSOT-26-6
Transistor PolarityN-Channel, P-Channel
Number of Channels2 Channel
Vds - Drain-Source Breakdown Voltage20 V
Id - Continuous Drain Current3.1 A, 4.6 A
Rds On - Drain-Source Resistance32 mOhms, 80 mOhms
Vgs - Gate-Source Voltage8 V
Vgs th - Gate-Source Threshold Voltage1 V
Qg - Gate Charge14.4 nC, 12.8 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation1.13 W
Channel ModeEnhancement
PackagingReel
ConfigurationDual
Fall Time3 ns, 5.5 ns
Forward Transconductance - Min16 S, 8.5 S
Product TypeMOSFETs
Rise Time7 ns, 13 ns
SeriesXP
SubcategoryTransistors
Transistor Type1 N-Channel, P-Channel
Typical Turn-Off Delay Time18 ns, 23 ns
Typical Turn-On Delay Time6 ns, 7 ns

Export and Environmental Classification

AttributeDescription
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

Documents

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Lead Time: 22 Weeks
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Quantity Unit PriceExt. Price
0,125 €375,00 €
0,108 €648,00 €
0,095 €855,00 €
0,078 €1.872,00 €
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