Reference Only

XP3B020M

MOSFETs P-MOS -30V -8.3A 20mOhms.

Manufacturer:

Mfr Part:
XP3B020M

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerYAGEO
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseSO-8
Transistor PolarityP-Channel
Number of Channels2 Channel
Vds - Drain-Source Breakdown Voltage30 V
Id - Continuous Drain Current8.3 A
Rds On - Drain-Source Resistance20 mOhms
Vgs - Gate-Source Voltage20 V
Vgs th - Gate-Source Threshold Voltage3 V
Qg - Gate Charge19.2 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation2 W
Channel ModeEnhancement
PackagingReel
ConfigurationDual
Fall Time20 ns
Forward Transconductance - Min16 S
Product TypeMOSFETs
Rise Time7 ns
SeriesXP
SubcategoryTransistors
Transistor Type2 P-Channel
Typical Turn-Off Delay Time43 ns
Typical Turn-On Delay Time11 ns

Export and Environmental Classification

AttributeDescription
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

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Lead Time: 22 Weeks
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0,177 €531,00 €
0,154 €924,00 €
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