Reference Only

XP3N1R8AMT

MOSFETs N-MOS 30V 41.9A 1.8mOhms.

Manufacturer:

Mfr Part:
XP3N1R8AMT

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerYAGEO
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CasePMPAK-8
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage30 V
Id - Continuous Drain Current41.9 A
Rds On - Drain-Source Resistance1.8 mOhms
Vgs - Gate-Source Voltage20 V
Vgs th - Gate-Source Threshold Voltage3 V
Qg - Gate Charge208 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation5 W
Channel ModeEnhancement
PackagingReel
ConfigurationSingle
Fall Time100 ns
Forward Transconductance - Min90 S
Product TypeMOSFETs
Rise Time54 ns
SeriesXP
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time82 ns
Typical Turn-On Delay Time17 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

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Lead Time: 22 Weeks
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(Minimum: 3.000 / Multiples: 3.000)
Quantity Unit PriceExt. Price
0,284 €852,00 €
0,254 €1.524,00 €
0,244 €2.196,00 €
0,214 €5.136,00 €
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