Reference Only

XP4800GEM

MOSFETs N-MOS 30V 9.2A 18mOhms.

Manufacturer:

Mfr Part:
XP4800GEM

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerYAGEO
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseSO-8
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage30 V
Id - Continuous Drain Current9.2 A
Rds On - Drain-Source Resistance18 mOhms
Vgs - Gate-Source Voltage20 V
Vgs th - Gate-Source Threshold Voltage3 V
Qg - Gate Charge11.2 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation2.5 W
Channel ModeEnhancement
PackagingReel
ConfigurationSingle
Fall Time19 ns
Forward Transconductance - Min24 S
Product TypeMOSFETs
Rise Time19 ns
SeriesXP
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time15 ns
Typical Turn-On Delay Time5 ns

Export and Environmental Classification

AttributeDescription
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

Documents

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Lead Time: 22 Weeks
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(Minimum: 3.000 / Multiples: 1)
Quantity Unit PriceExt. Price
0,114 €342,00 €
0,097 €582,00 €
0,086 €774,00 €
0,064 €1.536,00 €
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