Reference Only

XP5521GM

End of Life
MOSFETs N/P-CH 100V/-100V SO8

Manufacturer:

Mfr Part:
XP5521GM

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerYAGEO
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseSO-8
Transistor PolarityN-Channel, P-Channel
Number of Channels2 Channel
Vds - Drain-Source Breakdown Voltage100 V, 100 V
Id - Continuous Drain Current2.5 A, 2.5 A
Rds On - Drain-Source Resistance150 mOhms, 160 mOhms
Vgs - Gate-Source Voltage20 V
Vgs th - Gate-Source Threshold Voltage3 V, 3 V
Qg - Gate Charge10 nC, 22.5 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation2 W
Channel ModeEnhancement
ConfigurationDual
Fall Time5.5 ns, 21 ns
Forward Transconductance - Min3.3 S, 8 S
Product TypeMOSFETs
Rise Time6.5 ns, 5 ns
SubcategoryTransistors
Transistor Type1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time16 ns, 50 ns
Typical Turn-On Delay Time4.5 ns, 10 ns

Export and Environmental Classification

AttributeDescription
TARIC8541290000
RoHS CompliantCall to Verify RoHS
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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