Reference Only

XP65SL130DR

MOSFETs N-MOS 650V 26.2A 130mOhms.

Manufacturer:

Mfr Part:
XP65SL130DR

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerYAGEO
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-262-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage650 V
Id - Continuous Drain Current26.2 A
Rds On - Drain-Source Resistance140.8 mOhms
Vgs - Gate-Source Voltage20 V
Vgs th - Gate-Source Threshold Voltage5 V
Qg - Gate Charge110 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation2 W
Channel ModeEnhancement
PackagingTube
ConfigurationSingle
Fall Time32 ns
Forward Transconductance - Min17 S
Product TypeMOSFETs
Rise Time36 ns
SeriesXP
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time82 ns
Typical Turn-On Delay Time23 ns

Export and Environmental Classification

AttributeDescription
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

Documents

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