Reference Only

XP6C058YT

MOSFETs N+P MOS 60V 11.4/-9.7A 58/90mOhms.

Manufacturer:

Mfr Part:
XP6C058YT

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerYAGEO
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CasePMPAK-6
Transistor PolarityN-Channel, P-Channel
Number of Channels2 Channel
Vds - Drain-Source Breakdown Voltage60 V, 60 V
Id - Continuous Drain Current4 A, 4.5 A
Rds On - Drain-Source Resistance58 mOhms, 90 mOhms
Vgs - Gate-Source Voltage20 V
Vgs th - Gate-Source Threshold Voltage3 V, 3 V
Qg - Gate Charge23.2 nC, 24 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation2.5 W
Channel ModeEnhancement
PackagingReel
ConfigurationDual
Fall Time5 ns, 7 ns
Forward Transconductance - Min19 S, 9.5 S
Product TypeMOSFETs
Rise Time4 ns
SeriesXP
SubcategoryTransistors
Transistor Type1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time18 ns, 26 ns
Typical Turn-On Delay Time8 ns, 10 ns

Export and Environmental Classification

AttributeDescription
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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