Reference Only

XP6N3R8H

MOSFETs N-MOS 60V 90A 3.8mOhms.

Manufacturer:

Mfr Part:
XP6N3R8H

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerYAGEO
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseTO-252-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage60 V
Id - Continuous Drain Current90 A
Rds On - Drain-Source Resistance3.8 mOhms
Vgs - Gate-Source Voltage20 V
Vgs th - Gate-Source Threshold Voltage5 V
Qg - Gate Charge123.2 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation2 W
Channel ModeEnhancement
PackagingReel
ConfigurationSingle
Fall Time175 ns
Forward Transconductance - Min74 S
Product TypeMOSFETs
Rise Time135 ns
SeriesXP
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time40 ns
Typical Turn-On Delay Time16 ns

Export and Environmental Classification

AttributeDescription
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

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Lead Time: 22 Weeks
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0,376 €3.384,00 €
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