1200V XPTTM Gen 10 - IXYS - IGBTs
1 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Package / Case | Mounting Style | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Maximum Gate Emitter Voltage | Continuous Collector Current at 25 C | Pd - Power Dissipation | Minimum Operating Temperature | Maximum Operating Temperature | Series | Qualification | Packaging |
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Mfr: IXYH55N120C4 TTI: Not Assigned IXYS Availability: 0In StockIGBTs XPT thin-wafer technology, 4th generation (Gen 4) Trench IGBT. Disc IGBT Gen 4 XPT TO247 | 0In Stock | Si | TO-247-3 | Through Hole | Single | 1.2 kV | 2.5 V | - 20 V, 20 V | 140 A | 650 W | - 55 C | + 175 C | 1200V XPTTM Gen 10 | Tube |