Vishay - MOSFETs
1.531 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SI3122DV-T1-GE3 TTI: SI3122DV-T1-GE3 Vishay Availability: 0In StockMOSFETs N-CH SINGLE 100V TSOP-6 | 0In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 1 Channel | 100 V | 1.78 A | 160 mOhms | - 20 V, 20 V | 4 V | 3.8 nC | - 55 C | + 150 C | 1.34 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIS4604DN-T1-GE3 TTI: SIS4604DN-T1-GE3 Vishay Availability: 0In StockMOSFETs N-CH SINGLE 60V PPAK1212-8 | 0In Stock | Si | 60 V | 14.6 A | 12.4 mOhms | - 20 V, 20 V | 4 V | 11.2 nC | - 55 C | + 150 C | 3.6 W | Reel | ||||||||||
Mfr: SIHA15N80AEF-GE3 TTI: SIHA15N80AEF-GE3 Vishay Availability: 0In StockMOSFETs N-CH SINGLE 800V TO220FP | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 6 A | 350 mOhms | - 30 V, 30 V | 4 V | 36 nC | - 55 C | + 150 C | 33 W | Enhancement | Reel | |||||
Mfr: SIHH100N65E-T1-GE3 TTI: SIHH100N65E-T1-GE3 Vishay Availability: 0In StockMOSFETs E Series Power MOSFET 650 V (D-S) 150 C MOSFET 0.1 10V | 0In Stock | Si | SMD/SMT | PowerPAK-8x8 | N-Channel | 1 Channel | 650 V | 28 A | 100 mOhms | - 30 V, 30 V | 5 V | 41 nC | - 55 C | + 150 C | 184 W | Enhancement | Reel | |||||
Mfr: SISS26LDN-T1-BE3 TTI: SISS26LDN-T1-BE3 Vishay Availability: 0In StockMOSFETs N-CH SINGLE 60V PPAK1212-8S | 0In Stock | Si | SMD/SMT | 1212-8S | N-Channel | 1 Channel | 60 V | 81.2 A | 4.3 mOhms | - 20 V, 20 V | 2.5 V | 15.2 nC | - 55 C | + 150 C | 4.8 W | Reel | ||||||
0In Stock | Si | 650 V | 40 A | 50 mOhms | - 30 V, 30 V | 5 V | 90 nC | - 55 C | + 150 C | 236 W | Reel | |||||||||||
0In Stock | Si | SMD/SMT | TO-220AB | N-Channel | 1 Channel | 100 V | 150 A | 4 mOhms | - 10 V, 10 V | 4 V | 84 nC | - 55 C | + 175 C | 278 W | Reel | |||||||
Mfr: SIHP190N65E-GE3 TTI: SIHP190N65E-GE3 Vishay Availability: 0In StockMOSFETs N-CH SINGLE 650V TO220AB | 0In Stock | Si | SMD/SMT | TO-220AB | N-Channel | 1 Channel | 650 V | 20 A | 190 mOhms | - 30 V, 30 V | 5 V | 33 nC | - 55 C | + 150 C | 179 W | Enhancement | Vishay | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 12 A | 380 mOhms | - 30 V, 30 V | 4 V | 29 nC | - 55 C | + 150 C | 147 W | Enhancement | Tube | SIHP12N60E-GE3 SIHP12N60E-E3 | |||||
0In Stock | Si | SMD/SMT | TO-263 | N-Channel | 1 Channel | 650 V | 20 A | 190 mOhms | - 30 V, 30 V | 5 V | 33 nC | - 55 C | + 150 C | 179 W | Enhancement | Vishay | Tube | |||||
Mfr: SIHB100N65E-GE3 TTI: SIHB100N65E-GE3 Vishay Availability: 0In StockMOSFETs E Series Power MOSFET 650 V (D-S) 150 C MOSFET 0.1 10V | 0In Stock | Si | SMD/SMT | D2PAK-3 | N-Channel | 1 Channel | 650 V | 30 A | 100 mOhms | - 30 V, 30 V | 5 V | 41 nC | - 55 C | + 150 C | 208 W | Enhancement | Tube | |||||
Mfr: SIHP100N65E-GE3 TTI: SIHP100N65E-GE3 Vishay Availability: 0In StockMOSFETs E Series Power MOSFET 650 V (D-S) 150 C MOSFET 0.1 10V | 0In Stock | Si | Through Hole | TO-220AB-3 | N-Channel | 1 Channel | 650 V | 30 A | 100 mOhms | - 30 V, 30 V | 5 V | 41 nC | - 55 C | + 150 C | 208 W | Enhancement | Tube | |||||
Mfr: SIR5812DP-T1-RE3 TTI: SIR5812DP-T1-RE3 Vishay Availability: 0In StockMOSFETs N-CH SINGLE 80V PPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 80 V | 45.3 A | 13.5 mOhms | - 20 V, 20 V | 4 V | 10 nC | - 55 C | + 150 C | 50 W | Enhancement | Reel | |||||
Mfr: SIR5102DP-T1-RE3 TTI: SIR5102DP-T1-RE3 Vishay Availability: 0In StockMOSFETs N-CH SINGLE 100V PPAK SO-8 | 0In Stock | Si | Reel | |||||||||||||||||||
Mfr: VX60M153PW-M3/P TTI: VX60M153PW-M3/P Vishay Availability: 0In StockMOSFETs 60A 150V SKY TRENCH TO-247AD | 0In Stock | Si | Tube | |||||||||||||||||||
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0In Stock | Si | SMD/SMT | PowerPAK SC-70W-6L | N-Channel | 1 Channel | 40 V | 9 A | 19 mOhms | - 20 V, 20 V | 2.5 V | 12 nC | - 55 C | + 175 C | 13.6 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | 1212-8W | N-Channel | 1 Channel | 40 V | 16 A | 8.7 mOhms | - 10 V, 10 V | 2.5 V | 4 nC | - 55 C | + 175 C | 39.47 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | SO-8L Dual BWL | N-Channel | 2 Channel | 60 V | 62 A | 10.5 mOhms | - 20 V, 20 V | 2 V | 17 nC | - 55 C | + 175 C | 86 W | ||||||||
0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 20 V | 3.9 A | 120 mOhms | 1.5 V | 5.4 nC | - 55 C | + 175 C | 3 W | Enhancement | ||||||||
0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 12 V | 5 A | 50 mOhms | 8 V | 1 V | 9.3 nC | - 55 C | + 175 C | 2 W | Enhancement | |||||||
Not Available Online | Si | SMD/SMT | SOT-363-6 | P-Channel | 1 Channel | 20 V | 2.7 A | 150 mOhms | - 8 V, 8 V | 1 V | 13.5 nC | - 55 C | + 150 C | 2.8 W | Enhancement | Reel | SI1467DH-T1-E3 SI1467DH-T1-GE3 | |||||
0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 2.5 A | 170 mOhms | 20 V | 2.5 V | 4.5 nC | - 55 C | + 175 C | 1.9 W | Enhancement | |||||||
0In Stock | Si | SMD/SMT | SO-8L | N-Channel | 1 Channel | 30 V | 101 A | 3.25 mOhms | - 20 V, 20 V | 2 V | 33 nC | - 55 C | + 175 C | 60 W | ||||||||
Mfr: SQJ161ELP-T1_GE3 TTI: Not Assigned Vishay Availability: 0In StockMOSFETs Automotive P-Channel 60 V (D-S) 175 DegC MOSFET | 0In Stock |
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