Vishay Semiconductors - MOSFETs
2.262 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 14.5 A | 243 mOhms | - 30 V, 30 V | 4 V | 33 nC | - 55 C | + 150 C | 156 W | Enhancement | Tube | SIHP15N50E-BE3 | |||||
Mfr: SIR403EDP-T1-GE3 TTI: SIR403EDP-T1-GE3 Vishay Semiconductors MOSFETs -30V Vds 25V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 30 V | 40 A | 11.5 mOhms | - 25 V, 25 V | 2.8 V | 153 nC | - 55 C | + 150 C | 56.8 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 5.6 A | 540 mOhms | - 10 V, 10 V | 2 V | 6.1 nC | - 55 C | + 175 C | 43 W | Enhancement | Tube | IRL510PBF-BE3 | |||||
Mfr: SI3483CDV-T1-GE3 TTI: SI3483CDV-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -30V Vds 20V Vgs TSOP-6 | 0In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 30 V | 8 A | 34 mOhms | - 20 V, 20 V | 1 V | 33 nC | - 55 C | + 150 C | 4.2 W | Enhancement | TrenchFET | Reel | SI3483CDV-T1-BE3 SI3483CDV-GE3 | |||
Mfr: SI4154DY-T1-GE3 TTI: SI4154DY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 40 V | 36 A | 3.3 mOhms | - 20 V, 20 V | 1 V | 105 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET | Reel | SI4154DY-GE3 | |||
Mfr: SIB422EDK-T1-GE3 TTI: SIB422EDK-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds 8V Vgs PowerPAK SC-75 | 0In Stock | Si | SMD/SMT | SC-75-6 | N-Channel | 1 Channel | 20 V | 9 A | 30 mOhms | - 8 V, 8 V | 400 mV | 18 nC | - 55 C | + 150 C | 13 W | Enhancement | TrenchFET, PowerPAK | Reel | SIB422EDK-GE3 | |||
Mfr: IRF840LCLPBF TTI: IRF840LCLPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 500V TO262 | 0In Stock | Si | Through Hole | TO-262-3 | Tube | |||||||||||||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 17 A | 100 mOhms | - 20 V, 20 V | 4 V | 25 nC | - 55 C | + 175 C | 60 W | Enhancement | Tube | IRFZ24PBF-BE3 | |||||
Mfr: SUM90N03-2M2P-E3 TTI: SUM90N03-2M2P-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V 90A 250W | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 30 V | 90 A | 1.8 mOhms | - 20 V, 20 V | 1.5 V | 257 nC | - 55 C | + 175 C | 250 W | Enhancement | TrenchFET | Reel | ||||
Mfr: IRFPE30PBF TTI: IRFPE30PBF Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 800V TO247 | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 4.1 A | 3 Ohms | - 20 V, 20 V | 2 V | 78 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | |||||
Mfr: IRF610STRLPBF TTI: IRF610STRLPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-Chan 200V 3.3 Amp | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 200 V | 3.3 A | 1.5 Ohms | - 20 V, 20 V | 2 V | 8.2 nC | - 55 C | + 150 C | 36 W | Enhancement | Reel | |||||
Mfr: SIR846ADP-T1-GE3 TTI: SIR846ADP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 100V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 100 V | 60 A | 6.5 mOhms | - 20 V, 20 V | 1.8 V | 66 nC | - 55 C | + 150 C | 83 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR846ADP-GE3 | |||
Mfr: SIHB055N60EF-GE3 TTI: SIHB055N60EF-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CHANNEL 600V | 0In Stock | Si | SMD/SMT | TO-263AB-4 | N-Channel | 1 Channel | 600 V | 46 A | 55 mOhms | - 30 V, 30 V | 5 V | 63 nC | - 55 C | + 150 C | 278 W | Enhancement | Reel | |||||
Mfr: SIHD180N60E-GE3 TTI: SIHD180N60E-GE3 Vishay Semiconductors MOSFETs 650V Vds; 30V Vgs DPAK (TO-252) | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 19 A | 195 mOhms | - 30 V, 30 V | 3 V | 32 nC | - 55 C | + 150 C | 156 W | Enhancement | Tube | |||||
Mfr: SIR800ADP-T1-GE3 TTI: SIR800ADP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds 12V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 20 V | 177 A | 1.35 mOhms | - 8 V, 12 V | 1.5 V | 53 nC | - 55 C | + 150 C | 62.5 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIZ260DT-T1-GE3 TTI: SIZ260DT-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs DUAL N-CHANNEL 80-V PowerPAIR 3 x 3S | 0In Stock | Si | SMD/SMT | PowerPAIR-3x3-8 | N-Channel | 2 Channel | 80 V | 24.6 A, 24.7 A | 24.5 mOhms, 24.7 mOhms | - 20 V, 20 V | 1.1 V | 13.1 nC, 13.3 nC | - 55 C | + 150 C | 33 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIRA26DP-T1-RE3 TTI: SIRA26DP-T1-RE3 Vishay Semiconductors Availability: 0In StockMOSFETs 25V Vds 16V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 25 V | 30.3 A | 2.15 mOhms | - 12 V, 16 V | 2.5 V | 29 nC | - 55 C | + 150 C | 43.1 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SISA26DN-T1-GE3 TTI: SISA26DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 25V Vds 16V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 25 V | 60 A | 2.15 mOhms | - 12 V, 16 V | 1 V | 44 nC | - 55 C | + 150 C | 39 W | Enhancement | Reel | |||||
Mfr: SI7190ADP-T1-RE3 TTI: SI7190ADP-T1-RE3 Vishay Semiconductors MOSFETs 250V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 250 V | 14.4 A | 102 mOhms | - 20 V, 20 V | 4 V | 14.9 nC | - 55 C | + 150 C | 56.8 W | Enhancement | Reel | |||||
Mfr: IRFU9214PBF TTI: IRFU9214PBF Vishay Semiconductors Availability: 0In StockMOSFETs P-Chan 250V 2.7 Amp | 0In Stock | Si | Through Hole | TO-251-3 | P-Channel | 1 Channel | 250 V | 2.7 A | 3 Ohms | - 20 V, 20 V | 4 V | 14 nC | - 55 C | + 150 C | 50 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-262-3 | N-Channel | 1 Channel | 800 V | 4.1 A | 3 Ohms | - 20 V, 20 V | 2 V | 78 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | ||||||
Mfr: SI7615CDN-T1-GE3 TTI: SI7615CDN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 8V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 20 V | 35 A | 7.2 mOhms | - 8 V, 8 V | 1 V | 111 nC | - 55 C | + 150 C | 33 W | Enhancement | Reel | |||||
Mfr: SI8800EDB-T2-E1 TTI: SI8800EDB-T2-E1 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds 8V Vgs MICRO FOOT 0.8 x 0.8 | 0In Stock | Si | SMD/SMT | MicroFoot-4 | N-Channel | 1 Channel | 20 V | 2.8 A | 80 mOhms | - 8 V, 8 V | 400 mV | 8.3 nC | - 55 C | + 150 C | 900 mW | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | SMD/SMT | TO-263-3 | P-Channel | 1 Channel | 60 V | 18 A | 140 mOhms | - 20 V, 20 V | 4 V | 34 nC | - 55 C | + 175 C | 88 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 9.2 A | 750 mOhms | - 30 V, 30 V | 2 V | 49 nC | - 55 C | + 150 C | 170 W | Enhancement | Reel |
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