YAGEO XSemi - MOSFETs
659 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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Not Available Online | Si | SMD/SMT | PMPAK-8 | N-Channel | 2 Channel | 30 V | 13.2 A, 22.7 A | 5 mOhms, 11.5 mOhms | 20 V | 3 V | 16 nC, 32 nC | - 55 C | + 150 C | 3.13 W, 3.9 W | Enhancement | ||||||
Not Available Online | Si | SMD/SMT | TO-252-3 | N-Channel | 1 Channel | 30 V | 183 A | 2.1 mOhms | 20 V | 3 V | 113.6 nC | - 55 C | + 175 C | 2.4 W | Enhancement | Reel | |||||
Mfr: XP3NA2R8CMT TTI: Not Assigned YAGEO XSemi Availability: Not Available OnlineMOSFETs N-CH SINGLE 30V PMPAK5X6 | Not Available Online | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 30 V | 33.7 A | 2.8 mOhms | 20 V | 2.3 V | 52.8 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | ||||
Not Available Online | Si | SMD/SMT | SO-8 | N-Channel, P-Channel | 2 Channel | 100 V, 100 V | 2.5 A, 2.5 A | 150 mOhms, 160 mOhms | 20 V | 3 V, 3 V | 10 nC, 22.5 nC | - 55 C | + 150 C | 2 W | Enhancement | ||||||
Mfr: XP60SC180DP TTI: Not Assigned YAGEO XSemi Availability: Not Available OnlineMOSFETs N-CH SINGLE 600V TO220 | Not Available Online | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 20 A | 180 mOhms | 20 V | 4.5 V | 56 nC | - 55 C | + 150 C | 2 W | Enhancement | Tube | ||||
Mfr: XP65SA190DR TTI: Not Assigned YAGEO XSemi Availability: Not Available OnlineMOSFETs N-CH SINGLE 650V TO262 | Not Available Online | Si | Through Hole | TO-262-3 | N-Channel | 1 Channel | 650 V | 20 A | 190 mOhms | 20 V | 4 V | 68.8 nC | - 55 C | + 150 C | 2 W | Enhancement | Tube | ||||
Mfr: XP65SA430ADR TTI: Not Assigned YAGEO XSemi Availability: Not Available OnlineMOSFETs N-CH SINGLE 650V TO262 | Not Available Online | Si | Through Hole | TO-262-3 | N-Channel | 1 Channel | 650 V | 10 A | 438 mOhms | 20 V | 5 V | 36 nC | - 55 C | + 150 C | 2 W | Enhancement | Tube | ||||
Mfr: XP65SC210DDT8 TTI: Not Assigned YAGEO XSemi Availability: Not Available OnlineMOSFETs N-CH SINGLE 650V PDFN8X8 HV | Not Available Online | Si | SMD/SMT | PDFN-5 | N-Channel | 1 Channel | 650 V | 19 A | 210 mOhms | 20 V | 4.5 V | 56 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | ||||
Mfr: XP65SL145AFI TTI: Not Assigned YAGEO XSemi Availability: Not Available OnlineMOSFETs N-CH SINGLE 650V TO220CFM | Not Available Online | Si | Through Hole | TO-220CFM-3 | N-Channel | 1 Channel | 650 V | 21 A | 145 mOhms | 20 V | 5 V | 140.8 nC | - 55 C | + 150 C | 1.92 W | Enhancement | Tube | ||||
Not Available Online | Si | SMD/SMT | SO-8 | N-Channel | 1 Channel | 150 V | 4 A | 70 mOhms | 20 V | 3 V | 42 nC | - 55 C | + 150 C | 2.5 W | Enhancement | ||||||
Not Available Online | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 100 V | 1.2 A | 500 mOhms | 20 V | 3 V | 10.5 nC | - 55 C | + 150 C | 1.38 W | Enhancement | Reel | |||||
Not Available Online | Si | SMD/SMT | TO-252-3/2 | P-Channel | 1 Channel | 40 V | 17 A | 52 mOhms | 20 V | 3 V | 7.8 nC | - 55 C | + 150 C | 25 W | Enhancement | Reel | |||||
Not Available Online | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 20 V | 2.5 A | 90 mOhms | 8 V | 1 V | 7 nC | - 55 C | + 150 C | 833 mW | Enhancement | Reel | |||||
Not Available Online | Si | SMD/SMT | N-Channel | 1 Channel | 20 V | 38 mOhms | 16 V | 1.5 V | 6 nC | - 55 C | + 150 C | 1.25 W | Enhancement | Reel | |||||||
Mfr: XP60MQ115IT TTI: Not Assigned YAGEO XSemi Availability: Not Available OnlineMOSFETs N-CH SINGLE 600V TO220CFM-T | Not Available Online | Si | Through Hole | TO-220CFM-3 | N-Channel | 1 Channel | 600 V | 35.7 A | 115 mOhms | 20 V | 4 V | 138 nC | - 55 C | + 150 C | 1.92 W | Enhancement | |||||
Not Available Online | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 40 V | 20.8 A | 7 mOhms | 20 V | 3 V | 22.4 nC | - 55 C | + 150 C | 5 W | Enhancement | ||||||
Not Available Online | Si | SMD/SMT | SOT-223-4 | N-Channel | 1 Channel | 100 V | 2.1 A | 300 mOhms | 20 V | 3 V | 8 nC | - 55 C | + 150 C | 2.78 W | Enhancement | ||||||
Not Available Online | Si | SMD/SMT | SO-8 | N-Channel, P-Channel | 2 Channel | 100 V, 100 V | 3.2 A, 3.2 A | 135 mOhms, 155 mOhms | 20 V | 3 V, 3 V | 17.6 nC, 49.6 nC | - 55 C | + 150 C | 2 W | Enhancement | ||||||
Not Available Online | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 40 V | 195 A | 1.7 mOhms | 20 V | 5 V | 265.6 nC | - 55 C | + 175 C | 2.4 W | Enhancement | ||||||
Not Available Online | Si | SMD/SMT | SOT-223-4 | P-Channel | 1 Channel | 100 V | 3.1 A | 160 mOhms | 20 V | 3 V | 22.4 nC | - 55 C | + 150 C | 2.5 W | Enhancement | ||||||
Not Available Online | Si | SMD/SMT | TO-252-3 | N-Channel | 1 Channel | 100 V | 23 A | 80 mOhms | 20 V | 4 V | 30 nC | - 55 C | + 150 C | 96 W | Enhancement | ||||||
Not Available Online | Si | SMD/SMT | TO-252-3 | P-Channel | 1 Channel | 20 V | 8.3 A | 150 mOhms | 12 V | 1.25 V | 7.5 nC | - 55 C | + 150 C | 2 W | Enhancement | ||||||
Not Available Online | Si | SMD/SMT | SOT-23S-3 | P-Channel | 1 Channel | 30 V | 2.9 A | 95 mOhms | 25 V | 3 V | 6.5 nC | - 55 C | + 150 C | 1.25 W | Enhancement | ||||||
Not Available Online | Si | SMD/SMT | SO-8 | N-Channel | 2 Channel | 100 V | 1.9 A | 250 mOhms | 20 V | 3 V | 5 nC | - 55 C | + 150 C | 2 W | Enhancement | ||||||
Mfr: XP60SE140DIT TTI: Not Assigned YAGEO XSemi Availability: Not Available OnlineMOSFETs N-CH SINGLE 600V TO220CFM-T | Not Available Online | Si | Through Hole | TO-220CFM-3 | N-Channel | 1 Channel | 600 V | 21.7 A | 140 mOhms | 20 V | 4.5 V | 76.8 nC | - 55 C | + 150 C | 1.92 W | Enhancement | Tube |