IXFN210N30 - MOSFET Modules
1 ResultsPart | Availability | Purchasing | RoHS/Lead | Manufacturer | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Series | Packaging |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: IXFN210N30P3 TTI: IXFN210N30P3 IXYS Availability: 0In StockMOSFET Modules N-Channel: Power MOSFET w/Fast Diode | 0In Stock | IXYS | Si | Screw Mount | SOT-227-4 | N-Channel | 1 Channel | 300 V | 192 A | 14.5 mOhms | - 20 V, + 20 V | - 55 C | + 150 C | 1.5 kW | IXFN210N30 | Tube |