Littelfuse - MOSFETs
2.424 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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0In Stock | Si | SMD/SMT | SOT-223-3 | N-Channel | 1 Channel | 400 V | 300 mA | 9 Ohms | 15 V | 3.1 V | - 40 C | + 110 C | 2.5 W | Depletion | Reel | ||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 850 V | 14 A | 550 mOhms | 30 V | 3.5 V | 30 nC | - 55 C | + 150 C | 460 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 150 V | 15 A | 240 mOhms | Tube | |||||||||||||
Mfr: IXFH50N85X TTI: IXFH50N85X IXYS Availability: 0In StockMOSFETs 850V Ultra Junction X-Class Pwr MOSFET | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 850 V | 50 A | 105 mOhms | 30 V | 3.5 V | 152 nC | - 55 C | + 150 C | 890 W | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 8 A | 550 mOhms | 30 V | 3 V | 12 nC | - 55 C | + 150 C | 32 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 75 V | 140 A | 11 mOhms | 20 V | 2 V | 275 nC | - 55 C | + 150 C | 540 W | Enhancement | Linear L2 | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 3 kV | 2 A | 21 Ohms | 20 V | 3 V | 73 nC | - 55 C | + 150 C | 520 W | Enhancement | Polar3 | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 300 V | 150 A | 8.3 mOhms | 20 V | 2.5 V | 254 nC | - 55 C | + 150 C | 890 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 200 V | 220 A | 6.2 mOhms | 20 V | 2.5 V | 204 nC | - 55 C | + 150 C | 890 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 250 V | 44 A | 40 mOhms | 20 V | 2.5 V | 33 nC | - 55 C | + 150 C | 240 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 250 V | 120 A | 12 mOhms | 20 V | 4.5 V | 122 nC | - 55 C | + 150 C | 480 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 300 V | 38 A | 50 mOhms | 20 V | 2.5 V | 35 nC | - 55 C | + 150 C | 240 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1.2 kV | 6 A | 2.75 Ohms | 30 V | 2.5 V | 92 nC | - 55 C | + 150 C | 250 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 75 V | 240 A | 7 mOhms | 20 V | 2 V | 546 nC | - 55 C | + 150 C | 960 W | Enhancement | LinearL2 | Tube | ||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 1.2 kV | 1.4 A | 13 Ohms | 30 V | 2.5 V | 24.8 nC | - 55 C | + 150 C | 86 W | Enhancement | Polar | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 90 A | 12.8 mOhms | 20 V | 2.5 V | 78 nC | - 55 C | + 150 C | 390 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 650 V | 12 A | 310 mOhms | 30 V | 3 V | 18.5 nC | - 55 C | + 150 C | 180 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 650 V | 18 A | 200 mOhms | 30 V | 3 V | 29 nC | - 55 C | + 150 C | 290 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-4 | N-Channel | 1 Channel | 650 V | 60 A | 52 mOhms | 30 V | 3.5 V | 108 nC | - 55 C | + 150 C | 780 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 12 A | 310 mOhms | 30 V | 3 V | 18.5 nC | - 55 C | + 150 C | 40 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 1 kV | 32 A | 220 mOhms | 30 V | 3.5 V | 130 nC | - 55 C | + 150 C | 890 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 55 V | 140 A | 5.4 mOhms | 20 V | 2 V | 82 nC | - 55 C | + 175 C | 180 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 200 V | 32 A | 130 mOhms | 15 V | 2 V | 185 nC | - 55 C | + 150 C | 300 W | Enhancement | TrenchP | Reel | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 72 A | 20 mOhms | 20 V | 2.5 V | 55 nC | - 55 C | + 150 C | 320 W | Enhancement | HiPerFET | Tube | ||||
Mfr: FMD47-06KC5 TTI: FMD47-06KC5 IXYS Availability: 0In StockMOSFETs N-Channel Super Coolmos Power MOSFET | 0In Stock | Si | Through Hole | ISOPLUS-i4-PAK-5 | N-Channel | 1 Channel | 600 V | 47 A | 45 mOhms | 20 V | 3 V | 150 nC | - 55 C | + 150 C | Enhancement | CoolMOS, HiPerDyn | Tube |