Littelfuse - MOSFETs
2.423 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 100 V | 170 A | 9 mOhms | - 20 V, 20 V | 5 V | 198 nC | - 55 C | + 175 C | 714 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-264-3 | P-Channel | 1 Channel | 200 V | 120 A | 30 mOhms | - 15 V, 15 V | 4.5 V | 740 nC | - 55 C | + 150 C | 1.04 kW | Enhancement | TrenchP | Tube | ||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 250 V | 30 A | 60 mOhms | - 20 V, 20 V | 2.5 V | 21 nC | - 55 C | + 150 C | 170 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IXTK110N20L2 TTI: IXTK110N20L2 IXYS Availability: 0In StockMOSFETs LINEAR L2 SERIES MOSFET 200V 110A | 0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 200 V | 110 A | 24 mOhms | - 20 V, 20 V | 4.5 V | 500 nC | - 55 C | + 150 C | 960 W | Enhancement | Linear L2 | Tube | |||
0In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 200 V | 90 A | 44 mOhms | - 20 V, 20 V | 4 V | 205 nC | - 55 C | + 150 C | 890 W | Enhancement | PolarP | Tube | ||||
0In Stock | Si | SMD/SMT | SOT-223-3 | N-Channel | 1 Channel | 600 V | 100 mA | 44 Ohms | - 15 V, 15 V | 3.1 V | - 55 C | + 125 C | 1.8 W | Depletion | Reel | ||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.2 kV | 3 A | 4.5 Ohms | - 20 V, 20 V | 4.5 V | 39 nC | - 55 C | + 150 C | 150 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 1 kV | 1.6 A | 10 Ohms | - 20 V, 20 V | 4.5 V | 27 nC | - 55 C | + 150 C | 100 W | Depletion | Tube | |||||
0In Stock | Si | Through Hole | PLUS-264-3 | N-Channel | 1 Channel | 500 V | 100 A | 49 mOhms | - 30 V, 30 V | 5 V | 240 nC | - 55 C | + 150 C | 1.25 kW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 300 V | 88 A | 40 mOhms | - 20 V, 20 V | 5 V | 180 nC | - 55 C | + 150 C | 600 W | Enhancement | PolarHT | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1.2 kV | 3 A | 4.5 Ohms | - 20 V, 20 V | 2.5 V | 42 nC | - 55 C | + 150 C | 150 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 75 V | 340 A | 3.2 mOhms | - 20 V, 20 V | 4 V | 300 nC | - 55 C | + 175 C | 935 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 300 V | 88 A | 40 mOhms | - 20 V, 20 V | 5 V | 180 nC | - 55 C | + 150 C | 600 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 85 V | 96 A | 13 mOhms | - 15 V, 15 V | 2 V | 180 nC | - 55 C | + 150 C | 298 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 200 V | 26 A | 170 mOhms | - 20 V, 20 V | 2 V | 56 nC | - 55 C | + 150 C | 300 W | Enhancement | Tube | |||||
Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 24 A | 165 mOhms | - 20 V, 20 V | 2.5 V | 52 nC | - 55 C | + 150 C | 250 W | Enhancement | CoolMOS | Tube | ||||
Mfr: IXTR62N15P TTI: Not Assigned IXYS Availability: Not Available OnlineMOSFETs 62 Amps 150V 0.045 Rds | Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 150 V | 36 A | 45 mOhms | Tube | ||||||||||||
Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 10 A | 1.2 Ohms | - 20 V, 20 V | - 55 C | + 150 C | 300 W | Enhancement | HyperFET | Tube | ||||||
Mfr: IXFR27N80Q TTI: Not Assigned IXYS Availability: Not Available OnlineMOSFETs 27 Amps 800V 0.35W Rds | Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 27 A | 300 mOhms | - 20 V, 20 V | - 55 C | + 150 C | 500 W | Enhancement | Tube | ||||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 300 V | 72 A | 52 Ohms | Tube | |||||||||||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 40 V | 270 A | 2.2 mOhms | - 15 V, 15 V | 2 V | 182 nC | - 55 C | + 175 C | 375 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 24 A | 175 mOhms | - 30 V, 30 V | 2.5 V | 47 nC | - 55 C | + 150 C | 400 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 50 A | 40 mOhms | HiPerFET | Tube | |||||||||||
Not Available Online | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 800 V | 14 A | 700 mOhms | - 30 V, 30 V | 3 V | 61 nC | - 55 C | + 150 C | 400 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IXFR21N100Q TTI: Not Assigned IXYS Availability: Not Available OnlineMOSFETs 18 Amps 1000V 0.5 Rds | Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 18 A | 500 mOhms | - 20 V, 20 V | - 55 C | + 150 C | 350 W | Enhancement | HiPerFET | Tube |
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