Littelfuse - MOSFETs
2.424 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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Mfr: IXTA2R4N120P-TRL TTI: IXTA2R4N120P-TRL IXYS Availability: 0In StockMOSFETs N-CH SINGLE 1200V TO263D2 | 0In Stock | Si | Reel | ||||||||||||||||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 50 V | 32 A | 39 mOhms | 15 V | 2.5 V | 46 nC | - 55 C | + 150 C | 83 W | Enhancement | TrenchP | Reel | ||||
Mfr: IXTA380N036T4-7-TR TTI: IXTA380N036T4-7-TR IXYS Availability: 0In StockMOSFETs N-CH SINGLE 36V TO263D2 | 0In Stock | Si | SMD/SMT | TO-263-7 | N-Channel | 1 Channel | 36 V | 380 A | 1 mOhms | 15 V | 2 V | 260 nC | - 55 C | + 175 C | 480 W | Enhancement | TrenchT4 | Reel | |||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 50 V | 48 A | 30 mOhms | 15 V | 2 V | 53 nC | - 55 C | + 150 C | 150 W | Enhancement | TrenchP | Reel | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 46 A | 73 mOhms | 20 V | 5.2 V | 40 nC | - 55 C | + 150 C | 520 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 70 A | 44 mOhms | 20 V | 5.2 V | 66 nC | - 55 C | + 150 C | 780 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 18 A | 200 mOhms | 30 V | 3 V | 29 nC | - 55 C | + 150 C | 290 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IXFT26N100XHV TTI: IXFT26N100XHV IXYS Availability: 0In StockMOSFETs 1000V 26A TO-268HV Power MOSFET | 0In Stock | Si | SMD/SMT | TO-268-3 | N-Channel | 1 Channel | 1 kV | 8 A | 320 mOhms | 30 V | 3.5 V | 113 nC | - 55 C | + 150 C | 860 W | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 160 A | 7 mOhms | - 55 C | + 175 C | 430 W | Enhancement | HiPerFET | Tube | |||||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1 kV | 750 mA | 17 Ohms | 30 V | 4.5 V | 7.8 nC | - 55 C | + 150 C | 40 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 1.2 kV | 20 A | 570 mOhms | 30 V | 6.5 V | 193 nC | - 55 C | + 150 C | 780 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 30 A | 450 mOhms | 30 V | 5 V | 545 nC | - 55 C | + 150 C | 800 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 10 A | 570 mOhms | 30 V | - 55 C | + 150 C | 166 W | Enhancement | HiPerFET | Tube | ||||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 2.5 kV | 5 A | 8.8 Ohms | 30 V | 5 V | 200 nC | - 55 C | + 150 C | 960 W | Enhancement | Tube | |||||
Mfr: IXFQ22N60P3 TTI: IXFQ22N60P3 IXYS Availability: 0In StockMOSFETs 600V 22A 0.36Ohm PolarP3 Power MOSFET | 0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 600 V | 22 A | 360 mOhms | 30 V | 5 V | 38 nC | - 55 C | + 150 C | 500 W | Enhancement | HiPerFET | Tube | |||
Mfr: IXFK32N80Q3 TTI: IXFK32N80Q3 IXYS Availability: 0In StockMOSFETs Q3Class HiPerFET Pwr MOSFET 800V/32A | 0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 800 V | 32 A | 270 mOhms | 30 V | 140 nC | + 150 C | 1 kW | HiPerFET | Tube | ||||||
Mfr: IXFK64N60Q3 TTI: IXFK64N60Q3 IXYS Availability: 0In StockMOSFETs Q3Class HiPerFET Pwr MOSFET 600V/64A | 0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 600 V | 64 A | 95 mOhms | 30 V | 190 nC | 1.25 kW | HiPerFET | Tube | |||||||
Mfr: IXFX32N80Q3 TTI: IXFX32N80Q3 IXYS Availability: 0In StockMOSFETs Q3Class HiPerFET Pwr MOSFET 800V/32A | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 32 A | 270 mOhms | 30 V | 140 nC | + 150 C | 1 kW | HiPerFET | Tube | ||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.5 kV | 3 A | 3.85 Ohms | 30 V | 2.5 V | 67 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | SMPD-24 | N-Channel | 1 Channel | 100 V | 334 A | 2.6 mOhms | 20 V | 2.5 V | 670 nC | - 55 C | + 175 C | 680 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | P-Channel | 200 V | 90 A | 32 mOhms | Tube | |||||||||||||
0In Stock | Si | SMD/SMT | SMPD-24 | N-Channel | 200 V | 156 A | 8.3 mOhms | HiPerFET | Tube | ||||||||||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | HiPerFET | Tube | ||||||||||||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 55 V | 260 A | 3.3 mOhms | 20 V | 4 V | 140 nC | - 55 C | + 175 C | 480 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 250 V | 110 A | 24 mOhms | 20 V | 3 V | 157 nC | - 55 C | + 175 C | 694 W | Enhancement | HiPerFET | Tube |
