Littelfuse - MOSFETs
2.424 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 75 A | 25 mOhms | 20 V | 3 V | 74 nC | - 55 C | + 175 C | 360 W | Enhancement | PolarHT | Reel | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 250 V | 76 A | 42 mOhms | 20 V | 3 V | 92 nC | - 55 C | + 150 C | 460 W | Enhancement | Trench | Reel | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 250 V | 30 A | 140 mOhms | 20 V | 2.5 V | 130 nC | - 55 C | + 150 C | 355 W | Enhancement | Linear L2 | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 90 A | 12.8 mOhms | 20 V | 2.5 V | 78 nC | - 55 C | + 150 C | 36 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | TO-268-3 | 1 Channel | 200 V | 24 A | 420 mOhms | 30 V | 3.5 V | 130 nC | 660 W | Enhancement | Polar | Reel | |||||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 200 V | 50 A | 30 mOhms | 20 V | 2.5 V | 33 nC | - 55 C | + 150 C | 240 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 700 V | 12 A | 300 mOhms | 30 V | 2.5 V | - 55 C | + 150 C | 180 W | Enhancement | HiPerFET | Tube | |||||
Mfr: IXTA100N04T2-TRL TTI: IXTA100N04T2-TRL IXYS Availability: 0In StockMOSFETs N-CH SINGLE 1000V TO263D2 | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 40 V | 100 A | 7 mOhms | 20 V | 2 V | 25.5 nC | - 55 C | + 175 C | 150 W | Enhancement | TrenchT2 | Reel | |||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 500 V | 15 A | 480 mOhms | 20 V | 2.5 V | 123 nC | - 55 C | + 150 C | 300 W | Enhancement | Linear L2 | Reel | ||||
Mfr: IXTA2R4N120P-TRL TTI: IXTA2R4N120P-TRL IXYS Availability: 0In StockMOSFETs N-CH SINGLE 1200V TO263D2 | 0In Stock | Si | Reel | ||||||||||||||||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 50 V | 32 A | 39 mOhms | 15 V | 2.5 V | 46 nC | - 55 C | + 150 C | 83 W | Enhancement | TrenchP | Reel | ||||
Mfr: IXTA380N036T4-7-TR TTI: IXTA380N036T4-7-TR IXYS Availability: 0In StockMOSFETs N-CH SINGLE 36V TO263D2 | 0In Stock | Si | SMD/SMT | TO-263-7 | N-Channel | 1 Channel | 36 V | 380 A | 1 mOhms | 15 V | 2 V | 260 nC | - 55 C | + 175 C | 480 W | Enhancement | TrenchT4 | Reel | |||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 50 V | 48 A | 30 mOhms | 15 V | 2 V | 53 nC | - 55 C | + 150 C | 150 W | Enhancement | TrenchP | Reel | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 250 V | 150 A | 9 mOhms | 20 V | 2.5 V | 150 nC | - 55 C | + 150 C | 735 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1 kV | 3 A | 4.8 Ohms | 20 V | 2.5 V | 36 nC | - 55 C | + 150 C | 125 W | Enhancement | Polar | Reel | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 46 A | 73 mOhms | 20 V | 5.2 V | 40 nC | - 55 C | + 150 C | 520 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 70 A | 44 mOhms | 20 V | 5.2 V | 66 nC | - 55 C | + 150 C | 780 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 1.2 kV | 17 A | 990 mOhms | 30 V | 5 V | 270 nC | - 55 C | + 150 C | 700 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-PLUS-3 | N-Channel | 1 Channel | 1.2 kV | 17 A | 990 mOhms | 30 V | - 55 C | + 150 C | 700 W | Enhancement | Tube | |||||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 100 V | 160 A | 7 mOhms | - 55 C | + 175 C | 430 W | Enhancement | HiPerFET | Tube | |||||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 10 A | 740 mOhms | 30 V | - 55 C | + 150 C | 200 W | Enhancement | Tube | |||||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 250 V | 96 A | 29 mOhms | 30 V | 5 V | 114 nC | - 55 C | + 150 C | 625 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 18 A | 340 mOhms | 30 V | - 55 C | + 150 C | 320 W | Enhancement | HiPerFET | Tube | ||||||
Mfr: IXFT20N100P TTI: IXFT20N100P IXYS Availability: 0In Stock300 On Order Expected 10-Mar-27 MOSFETs 20 Amps 1000V 1 Rds | 0In Stock300 On Order Expected 10-Mar-27 | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 1 kV | 20 A | 570 mOhms | 30 V | 6.5 V | 126 nC | - 55 C | + 150 C | 660 W | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | P-Channel | 1 Channel | 500 V | 8 A | 1.2 Ohms | 20 V | - 55 C | + 150 C | 180 W | Enhancement | Tube |
