IXYS - MOSFETs
2.318 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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0In Stock | Si | SMD/SMT | TO-268-3 | P-Channel | 1 Channel | 200 V | 68 A | 55 mOhms | 15 V | 4 V | 380 nC | - 55 C | + 150 C | 568 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1.2 kV | 800 mA | 20.5 Ohms | 20 V | 4.5 V | 14 nC | - 55 C | + 150 C | 50 W | Enhancement | Polar | Tube | ||||
0In Stock | Si | Through Hole | TO-3P-3 | P-Channel | 1 Channel | 100 V | 52 A | 50 mOhms | 20 V | 4 V | 60 nC | - 55 C | + 150 C | 300 W | Enhancement | PolarP | Tube | ||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 100 V | 200 A | 7.5 mOhms | 20 V | 5 V | 240 nC | - 55 C | + 175 C | 800 W | Enhancement | PolarHT | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 12 A | 1.05 Ohms | 20 V | 3.5 V | 80 nC | - 55 C | + 150 C | 463 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IXFH30N50Q3 TTI: IXFH30N50Q3 IXYS Availability: 0In StockMOSFETs Q3Class HiPerFET Pwr MOSFET 500V/30A | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 30 A | 200 mOhms | 30 V | 3.5 V | 62 nC | - 55 C | + 150 C | 690 W | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 300 V | 56 A | 27 mOhms | 20 V | 2.5 V | 56 nC | - 55 C | + 150 C | 320 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 150 V | 62 A | 33 mOhms | 20 V | 5.5 V | 70 nC | - 55 C | + 175 C | 350 W | Enhancement | PolarHT | Tube | ||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 500 V | 36 A | 170 mOhms | 30 V | 5 V | 85 nC | - 55 C | + 150 C | 540 W | Enhancement | PolarHV | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 500 V | 3 A | 1.5 Ohms | 20 V | 4.5 V | 40 nC | - 55 C | + 150 C | 125 W | Depletion | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 85 V | 96 A | 13 mOhms | 15 V | 2 V | 180 nC | - 55 C | + 150 C | 298 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 150 V | 180 A | 10 mOhms | 20 V | 5 V | 240 nC | - 55 C | + 175 C | 800 W | Enhancement | PolarHT | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 160 A | 7 mOhms | - 55 C | + 175 C | 430 W | Enhancement | HiPerFET | Tube | |||||||
Mfr: IXFX220N17T2 TTI: IXFX220N17T2 IXYS Availability: 0In StockMOSFETs GigaMOS Trench T2 HiperFET Pwr MOSFET | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 170 V | 220 A | 6.3 mOhms | 20 V | 2.5 V | 500 nC | - 55 C | + 175 C | 1.25 mW | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 500 V | 24 A | 270 mOhms | 30 V | 4.5 V | 48 nC | - 55 C | + 150 C | 480 W | Enhancement | Polar2 HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 150 V | 400 A | 3.1 mOhms | 20 V | 4.5 V | 430 nC | - 55 C | + 175 C | 1.5 kW | Enhancement | HiPerFET | Tube | ||||
Mfr: IXFK420N10T TTI: IXFK420N10T IXYS Availability: 0In StockMOSFETs TRENCH HIPERFET PWR MOSFET 100V 420A | 0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 100 V | 420 A | 2.6 mOhms | 20 V | 5 V | 670 nC | - 55 C | + 175 C | 1.67 kW | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 300 V | 120 A | 11 mOhms | 20 V | 4.5 V | 170 nC | - 55 C | + 150 C | 735 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 85 V | 96 A | 13 mOhms | 15 V | 2 V | 180 nC | - 55 C | + 150 C | 298 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 50 V | 140 A | 9 mOhms | 15 V | 4 V | 200 nC | - 55 C | + 150 C | 298 W | Enhancement | TrenchP | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 20 A | 520 mOhms | 30 V | 5 V | 86 nC | - 55 C | + 150 C | 500 W | Enhancement | HiPerFET | Tube | ||||
Mfr: MTI85W100GC-SMD TTI: MTI85W100GC-SMD IXYS Availability: 0In StockMOSFETs MOSFET MOD 100V ISOPLUSDIL | 0In Stock | Si | SMD/SMT | ISOPLUS-DIL-17 | N-Channel | 6 Channel | 100 V | 120 A | 4 mOhms | 15 V | 2 V | 88 nC | - 55 C | + 150 C | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | ISOPLUS-i4-PAK-5 | N-Channel | 2 Channel | 100 V | 75 A | 25 mOhms | 20 V | 4 V | 180 nC | - 55 C | + 125 C | Enhancement | HiPerFET, ISOPLUS i4-PAC | Tube | |||||
Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 24 A | 165 mOhms | 20 V | 2.5 V | 52 nC | - 55 C | + 150 C | 250 W | Enhancement | CoolMOS | Tube | ||||
Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 10 A | 1.2 Ohms | 20 V | - 55 C | + 150 C | 300 W | Enhancement | HyperFET | Tube |