IXYS - MOSFETs
2.318 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1 kV | 5 A | 2.8 Ohms | 30 V | 3 V | 33.4 nC | - 55 C | + 150 C | 250 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 14 A | 550 mOhms | 30 V | 3 V | 36 nC | - 55 C | + 150 C | 300 W | Enhancement | Reel | |||||
Mfr: IXTA08N120P-TRL TTI: IXTA08N120P-TRL IXYS Availability: 0In StockMOSFETs N-CH SINGLE 1200V TO263D2 | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1.2 kV | 800 mA | 25 Ohms | 30 V | 2.5 V | 14 nC | - 55 C | + 150 C | 50 W | Enhancement | Polar | Reel | |||
0In Stock | Si | Through Hole | TO-247-3 | P-Channel | 200 V | 32 A | 130 mOhms | Tube | |||||||||||||
0In Stock | Si | Through Hole | TO-247-3 | P-Channel | 100 V | 110 A | 11 mOhms | Tube | |||||||||||||
Mfr: IXFA8N85XHV TTI: IXFA8N85XHV IXYS Availability: 0In StockMOSFETs 850V/8A U-Junc X-Cla ss Power MOSFET | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 850 V | 8 A | 850 mOhms | 30 V | 3 V | 17 nC | - 55 C | + 150 C | 200 W | Enhancement | HiPerFET | Tube | |||
Mfr: IXTA90N075T2-TRL TTI: IXTA90N075T2-TRL IXYS Availability: 0In StockMOSFETs N-CH SINGLE 75V TO263D2 | 0In Stock | Si | Reel | ||||||||||||||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 12 A | 850 mOhms | 30 V | - 55 C | + 150 C | 360 W | Enhancement | HiPerFET | Tube | ||||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 800 V | 24 A | 400 mOhms | 30 V | 5 V | 105 nC | - 55 C | + 150 C | 650 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | TO-263-7 | N-Channel | 1 Channel | 100 V | 160 A | 7 mOhms | - 55 C | + 175 C | 430 W | Enhancement | HiPerFET | Tube | |||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 38 A | 130 mOhms | 20 V | 2.5 V | 330 nC | - 55 C | + 150 C | 400 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 1 kV | 29 A | 230 mOhms | 30 V | 3.5 V | 350 nC | - 55 C | + 150 C | 520 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | PLUS-264-3 | N-Channel | 1 Channel | 100 V | 300 A | 5.5 mOhms | 20 V | 5 V | 279 nC | - 55 C | + 175 C | 1.5 kW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 130 A | 9.1 mOhms | HiPerFET | Tube | |||||||||||
0In Stock | Si | Through Hole | PLUS-264-3 | N-Channel | 1 Channel | 300 V | 170 A | 18 mOhms | 20 V | 4.5 V | 258 nC | - 55 C | + 150 C | 1.25 kW | Enhancement | HiPerFET | Tube | ||||
Mfr: IXFB52N90P TTI: IXFB52N90P IXYS Availability: 0In StockMOSFETs PolarHV HiPerFETs 500V-1.2Kv Red Rds | 0In Stock | Si | Through Hole | PLUS-264-3 | N-Channel | 1 Channel | 900 V | 52 A | 160 mOhms | 30 V | 6.5 V | 308 nC | - 55 C | + 150 C | 1.25 kW | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 150 V | 150 A | 13 mOhms | 20 V | 2.5 V | 150 nC | - 55 C | + 175 C | 480 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 7 A | 550 mOhms | 30 V | 5.5 V | 36 nC | - 55 C | + 150 C | 75 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 100 V | 170 A | 12 mOhms | 20 V | 4 V | 240 nC | - 55 C | + 150 C | 890 W | Enhancement | Tube | |||||
Mfr: IXFK40N90P TTI: IXFK40N90P IXYS Availability: 0In StockMOSFETs PolarHV HiPerFETs 500V-1.2Kv Red Rds | 0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 900 V | 40 A | 210 mOhms | 30 V | 6.5 V | 230 nC | - 55 C | + 150 C | 960 W | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-247-3 | P-Channel | 500 V | 22 A | 260 mOhms | Tube | |||||||||||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 500 V | 34 A | 180 mOhms | HiPerFET | Tube | ||||||||||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 2 kV | 3 A | 8 Ohms | 20 V | 3 V | - 55 C | + 150 C | 520 W | Polar3 | Tube | |||||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 100 V | 110 A | 15 mOhms | 20 V | 2.5 V | 110 nC | - 55 C | + 175 C | 480 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 62 A | 100 mOhms | 30 V | 3 V | 550 nC | - 55 C | + 150 C | 800 W | Enhancement | Tube |
