IXYS - MOSFETs
2.317 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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Mfr: IXFQ50N50P3 TTI: IXFQ50N50P3 IXYS Availability: 0In StockMOSFETs N-Channel: Power MOSFET w/Fast Diode | 0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 500 V | 50 A | 125 mOhms | - 30 V, 30 V | 5 V | 85 nC | - 55 C | + 150 C | 960 W | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 300 V | 94 A | 36 mOhms | HiPerFET | Tube | ||||||||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 850 V | 14 A | 550 mOhms | - 30 V, 30 V | 3.5 V | 30 nC | - 55 C | + 150 C | 460 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | HiPerFET | Tube | ||||||||||||||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 800 V | 16 A | 600 mOhms | - 30 V, 30 V | - 55 C | + 150 C | 460 W | Enhancement | HiPerFET | Tube | ||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 20 A | 290 mOhms | - 30 V, 30 V | 5 V | 150 nC | - 55 C | + 150 C | 300 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 100 V | 133 A | 9 mOhms | - 20 V, 20 V | 5 V | 235 nC | - 55 C | + 175 C | 300 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 250 V | 42 A | 84 mOhms | - 20 V, 20 V | - 55 C | + 150 C | 300 W | Enhancement | Tube | |||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 150 V | 102 A | 18 mOhms | - 20 V, 20 V | - 55 C | + 175 C | 455 W | Enhancement | HiPerFET | Tube | ||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.2 kV | 15 A | 500 mOhms | - 30 V, 30 V | 6.5 V | 225 nC | - 55 C | + 150 C | 320 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IXTX600N04T2 TTI: IXTX600N04T2 IXYS Availability: 0In StockMOSFETs GigaMOS Trench T2 HiperFET PWR MOSFET | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 40 V | 600 A | 1.5 mOhms | - 20 V, 20 V | 1.5 V | 590 nC | - 55 C | + 175 C | 1.25 mW | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 20 A | 185 mOhms | - 30 V, 30 V | 2.5 V | - 55 C | + 150 C | 290 W | Enhancement | HiPerFET | Tube | |||||
Mfr: IXTT12N150HV-TRL TTI: IXTT12N150HV-TRL IXYS Availability: 0In StockMOSFETs N-CH SINGLE 1500V TO268AA | 0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 1.5 kV | 12 A | 2.2 Ohms | - 30 V, 30 V | 2.5 V | 106 nC | - 55 C | + 150 C | 890 W | Enhancement | Reel | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 800 V | 7 A | 1.44 Ohms | - 30 V, 30 V | 3 V | 32 nC | - 55 C | + 150 C | 200 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 200 V | 140 A | 9.6 mOhms | - 20 V, 20 V | 2.5 V | 127 nC | - 55 C | + 150 C | 480 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IXFT16N120P-TRL TTI: IXFT16N120P-TRL IXYS Availability: 0In StockMOSFETs N-CH SINGLE 1200V TO268AA | 0In Stock | Si | SMD/SMT | TO-268-3 | 1 Channel | 1.2 kV | 16 A | 960 mOhms | - 30 V, 30 V | 3.5 V | 120 nC | 660 W | Enhancement | Polar | Reel | ||||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 55 V | 90 A | 8.4 mOhms | - 20 V, 20 V | 2 V | - 55 C | + 175 C | 150 W | TrenchT2 | Reel | |||||||
Mfr: IXTA220N04T2-TRL TTI: IXTA220N04T2-TRL IXYS Availability: 0In StockMOSFETs N-CH SINGLE 40V TO263D2 | 0In Stock | Si | SMD/SMT | TO-263-7 | N-Channel | 1 Channel | 40 V | 220 A | 3.5 mOhms | - 20 V, 20 V | 2 V | 112 nC | - 55 C | + 175 C | 360 W | Enhancement | TrenchT2 | Reel | |||
Mfr: IXTA1R4N100PTRL TTI: IXTA1R4N100PTRL IXYS Availability: 0In StockMOSFETs N-CH SINGLE 1000V TO263D2 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 1 kV | 1.4 A | 11.8 Ohms | - 20 V, 20 V | 2.5 V | 17.8 nC | - 55 C | + 150 C | 63 W | Enhancement | Polar | Reel | |||
Mfr: IXTA70N075T2-TRL TTI: IXTA70N075T2-TRL IXYS Availability: Not Available OnlineMOSFETs N-CH SINGLE 75V TO263D2 | Not Available Online | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 75 V | 70 A | 12 mOhms | - 20 V, 20 V | 2 V | 46 nC | - 55 C | + 175 C | 150 W | Enhancement | TrenchT2 | Reel | |||
0In Stock | Si | Tube | |||||||||||||||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 26 A | 130 mOhms | - 30 V, 30 V | 5 V | 45 nC | - 55 C | + 150 C | 460 W | Enhancement | Tube | |||||
Mfr: IXFK66N85X TTI: IXFK66N85X IXYS Availability: 0In StockMOSFETs 850V Ultra Junction X-Class Pwr MOSFET | 0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 850 V | 66 A | 65 mOhms | - 30 V, 30 V | 3.5 V | 230 nC | - 55 C | + 150 C | 1.25 kW | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 850 V | 30 A | 220 mOhms | - 30 V, 30 V | 3.5 V | 68 nC | - 55 C | + 150 C | 695 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1.2 kV | 6 A | 2.75 Ohms | - 30 V, 30 V | 2.5 V | 92 nC | - 55 C | + 150 C | 250 W | Enhancement | Reel |
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