IXYS - MOSFETs
2.318 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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Mfr: IXFA20N85XHV TTI: IXFA20N85XHV IXYS Availability: 0In StockMOSFETs 850V Ultra Junction X-Class Pwr MOSFET | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 850 V | 20 A | 330 mOhms | 30 V | 3.5 V | 63 nC | - 55 C | + 150 C | 540 W | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 650 V | 4 A | 850 mOhms | 30 V | 3 V | 8.3 nC | - 55 C | + 150 C | 80 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IXFK220N17T2 TTI: IXFK220N17T2 IXYS Availability: 0In StockMOSFETs GigaMOS Trench T2 HiperFET Pwr MOSFET | 0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 170 V | 220 A | 6.3 mOhms | 20 V | 5 V | 500 nC | - 55 C | + 175 C | 1.25 kW | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | SMD/SMT | SOT-89-3 | N-Channel | 1 Channel | 400 V | 300 mA | 9 Ohms | 15 V | 3.1 V | - 40 C | + 110 C | 1.1 W | Depletion | Reel | ||||||
Mfr: IXFX150N30P3 TTI: IXFX150N30P3 IXYS Availability: 0In StockMOSFETs N-Channel: Power MOSFET w/Fast Diode | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 300 V | 150 A | 19 mOhms | 20 V | 3 V | 197 nC | - 55 C | + 150 C | 1.3 mW | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 10 A | 740 mOhms | 30 V | 5 V | 32 nC | - 55 C | + 150 C | 200 W | Enhancement | PolarHV | Tube | ||||
Mfr: IXFK360N15T2 TTI: IXFK360N15T2 IXYS Availability: 0In StockMOSFETs GigaMOS Trench T2 HiperFET PWR MOSFET | 0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 150 V | 360 A | 4 mOhms | 20 V | 2.5 V | 715 nC | - 55 C | + 175 C | 1.67 mW | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 300 V | 56 A | 27 mOhms | 20 V | 2.5 V | 56 nC | - 55 C | + 150 C | 36 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 1 kV | 52 A | 125 mOhms | 30 V | 3.5 V | 245 nC | - 55 C | + 150 C | 1.25 kW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 1.6 A | 2.3 Ohms | 20 V | 4.5 V | 23.7 nC | - 55 C | + 150 C | 100 W | Depletion | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 300 V | 69 A | 49 mOhms | 20 V | 5 V | 156 nC | - 55 C | + 150 C | 500 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 250 V | 96 A | 29 mOhms | 30 V | - 55 C | + 150 C | 625 W | Enhancement | HiPerFET | Tube | ||||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 1 kV | 1.4 A | 11 Ohms | 20 V | 2.5 V | 17.8 nC | - 55 C | + 150 C | 63 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 64 A | 96 mOhms | 30 V | 5 V | 200 nC | - 55 C | + 150 C | 1.04 mW | Enhancement | HiPerFET | Tube | ||||
Mfr: IXFK78N50P3 TTI: IXFK78N50P3 IXYS Availability: 0In StockMOSFETs 500V 78A 0.068Ohm PolarP3 Power MOSFET | 0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 500 V | 78 A | 68 mOhms | 30 V | 5 V | 147 nC | - 55 C | + 150 C | 1.13 kW | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 2 kV | 3 A | 8 Ohms | 20 V | 3 V | 70 nC | - 55 C | + 150 C | 520 W | Enhancement | Polar3 | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.5 kV | 12 A | 2 Ohms | 30 V | 4.5 V | 106 nC | - 55 C | + 150 C | 890 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 850 V | 8 A | 850 mOhms | 30 V | 3 V | 17 nC | - 55 C | + 150 C | 200 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-264-3 | P-Channel | 1 Channel | 200 V | 90 A | 44 mOhms | 20 V | 4.5 V | 205 nC | - 55 C | + 150 C | 890 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 60 A | 18 mOhms | 20 V | 2.5 V | 49 nC | - 55 C | + 175 C | 176 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 500 V | 26 A | 230 mOhms | 30 V | 5.5 V | 65 nC | - 55 C | + 150 C | 400 W | Enhancement | PolarHV | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 26 A | 270 mOhms | 30 V | 5 V | 72 nC | - 55 C | + 150 C | 460 W | Enhancement | PolarHV | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 800 V | 3.5 A | 3 Ohms | 30 V | 5.5 V | 14.2 nC | - 55 C | + 150 C | 100 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | TO-252-3 | N-Channel | 1 Channel | 55 V | 90 A | 8.4 mOhms | 20 V | 2 V | 42 nC | - 55 C | + 175 C | 150 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Tube |