Toshiba - MOSFETs
3.364 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: TK42A12N1,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs MOSFET NCh7.8ohm VGS10V10uAVDS120V | 0In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 120 V | 42 A | 7.8 mOhms | - 20 V, 20 V | 4 V | 52 nC | - 55 C | + 150 C | 35 W | Enhancement | U-MOSVIII-H | Tube | ||||
0In Stock | Si | SMD/SMT | L-TOGL-9 | N-Channel | 1 Channel | 40 V | 400 A | 470 uOhms | - 20 V, 20 V | 3 V | 295 nC | + 175 C | 750 W | Enhancement | Reel | |||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 20 A | 80 mOhms | - 30 V, 30 V | 4 V | 43 nC | + 150 C | 211 W | Enhancement | Tube | |||||||
Mfr: TK042N65Z5,S1F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 650V DTMOS6 HSD TO-247 42mohm | 0In Stock | Tube | ||||||||||||||||||||
0In Stock | Si | SMD/SMT | UFM-3 | N-Channel, SBD | 1 Channel | 20 V | 3.2 A | - 10 V, 10 V | AEC-Q101 | Reel | ||||||||||||
Mfr: SSM6J216FE,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=--4.8A VDSS=-12V | 0In Stock | Si | SMD/SMT | SOT-563-6 | P-Channel | 1 Channel | 12 V | 4.8 A | 26 mOhms | - 8 V, 8 V | 1 V | 12.7 nC | - 55 C | + 150 C | 700 mW | Enhancement | U-MOSVI | Reel | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 37 A | 63 mOhms | 30 V | 4 V | 56 nC | + 150 C | 242 W | Enhancement | Tube | |||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 75 A | 8.2 mOhms | - 20 V, 20 V | 1.5 V | 28 nC | - 55 C | + 175 C | 81 W | Enhancement | U-MOSIX-H | Tube | |||||
0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 45 V | 232 A | 1.4 mOhms | - 20 V, 20 V | 1.4 V | 74 nC | + 175 C | 132 W | Enhancement | U-MOSIX-H | Reel | ||||||
0In Stock | Si | SMD/SMT | TSON-8 | N-Channel | 1 Channel | 60 V | 105 A | 4.8 mOhms | - 20 V, 20 V | 1.5 V | 29 nC | - 55 C | + 175 C | 104 W | Enhancement | U-MOSIX-H | Reel | |||||
0In Stock | Si | SMD/SMT | UDFN-6 | P-Channel | 1 Channel | 20 V | 2 A | 112 mOhms | - 8 V, 8 V | 300 mV | 4.6 nC | - 55 C | + 150 C | 1 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 250 V | 13 A | 250 mOhms | - 20 V, 20 V | 1.5 V | 25 nC | - 55 C | + 150 C | 96 W | Enhancement | MOSVII | Reel | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 4 A | 3.5 Ohms | - 30 V, 30 V | 2.5 V | 15 nC | - 55 C | + 150 C | 35 W | Enhancement | MOSVIII | Tube | |||||
0In Stock | Si | Reel | ||||||||||||||||||||
0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 60 V | 280 A | 1 mOhms | - 20 V, 20 V | 2.5 V | 91 nC | + 175 C | 210 W | Enhancement | Reel | TPH1R306PL1,LQ(M | ||||||
Mfr: SSM6N7002KFU,LXH TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs SMOS 2 in 1 Dual Nch High ESD protected | 0In Stock | Si | SMD/SMT | US6-6 | N-Channel | 1 Channel | 60 V | 300 mA | 1.5 Ohms | - 20 V, 20 V | 2.1 V | 390 pC | + 150 C | 500 mW | Enhancement | AEC-Q101 | Reel | |||||
0In Stock | Si | SMD/SMT | SOT-363-6 | P-Channel | 2 Channel | 20 V | 250 mA | 1.4 Ohms | - 10 V, 10 V | 1 V | + 150 C | 285 mW | Enhancement | U-MOSVII | Reel | |||||||
Mfr: TK110A10PL,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-220SIS PD=36W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 36 A | 16 mOhms | - 20 V, 20 V | 2.5 V | 33 nC | - 55 C | + 175 C | 36 W | Enhancement | U-MOSIX-H | Tube | ||||
Mfr: TK5R3A06PL,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-220SIS PD=36W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 56 A | 200 mOhms | - 20 V, 20 V | 3.5 V | 45 nC | - 55 C | + 150 C | 45 W | Enhancement | U-MOSIX-H | Tube | ||||
Mfr: TK62Z60X,S1F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-247-4L PD=400W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-247-4 | N-Channel | 1 Channel | 600 V | 61.8 A | 40 mOhms | - 30 V, 30 V | 3.5 V | 135 nC | - 55 C | + 150 C | 400 W | Enhancement | DTMOSIV-H | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 30 A | 65 mOhms | - 30 V, 30 V | 4 V | 62 nC | - 55 C | + 150 C | 270 W | Enhancement | DTMOSVI | Reel | |||||
0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 40 V | 150 A | 850 uOhms | - 20 V, 20 V | 1.4 V | 103 nC | - 55 C | + 175 C | 170 W | Enhancement | U-MOSIX-H | Reel | |||||
Mfr: TK12E80W,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 800V 1400pF 23nC 11.5A 165W | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 11.5 A | 380 mOhms | - 20 V, 20 V | 3 V | 23 nC | - 55 C | + 150 C | 165 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: SSM6K341NU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=6A VDSS=100V | 0In Stock | Si | SMD/SMT | UDFN-6 | N-Channel | 1 Channel | 60 V | 6 A | 28 mOhms | - 20 V, 20 V | 1.5 V | 9.3 nC | - 55 C | + 150 C | 1.25 W | Enhancement | U-MOSVIII-H | Reel | ||||
Mfr: TK12A55D(STA4,Q,M) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch MOS 12A 550V 45W 1550pF 0.57 | 0In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 550 V | 12 A | 570 mOhms | 45 W | MOSVII | Tube |
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