Toshiba - MOSFETs
3.840 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 500 V | 9.7 A | 430 mOhms | 30 V | 2.7 V | 20 nC | - 55 C | + 150 C | 80 W | Enhancement | DTMOSVI | Reel | |||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 250 V | 13 A | 250 mOhms | 20 V | 1.5 V | 25 nC | - 55 C | + 150 C | 96 W | Enhancement | MOSVII | Reel | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 4 A | 3.5 Ohms | 30 V | 2.5 V | 15 nC | - 55 C | + 150 C | 35 W | Enhancement | MOSVIII | Tube | |||||
Mfr: XPN3R804NC,L1XHQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 100W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | TSON-Advance-8 | N-Channel | 1 Channel | 40 V | 40 A | 3.8 mOhms | 20 V | 2.5 V | 35 nC | - 55 C | + 175 C | 100 W | Enhancement | AEC-Q101 | Reel | XPN3R804NC,L1XHQ(O | |||
0In Stock | Si | SMD/SMT | TSON-8 | N-Channel | 1 Channel | 80 V | 34 A | 28 mOhms | 20 V | 3.5 V | 16 nC | + 175 C | 57 W | Enhancement | Reel | TPN19008QM,LQ(S | ||||||
Mfr: XPH6R30ANB,L1XHQ TTI: Not Assigned Toshiba Availability: Not Available OnlineMOSFETs PD=132W F=1MHZ AEC-Q101 | Not Available Online | Si | SMD/SMT | SOP-Advance-8 | N-Channel | 1 Channel | 100 V | 45 A | 6.3 mOhms | 20 V | 3.5 V | 52 nC | - 55 C | + 175 C | 132 W | Enhancement | AEC-Q101 | Reel | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 20 A | 80 mOhms | 30 V | 4 V | 43 nC | + 150 C | 211 W | Enhancement | Tube | |||||||
0In Stock | Si | SMD/SMT | UFM-3 | P-Channel | 1 Channel | 20 V | 3 A | 103 mOhms | - 8 V, 6 V | 1 V | 4.6 nC | + 150 C | 1 W | Enhancement | AEC-Q101 | U-MOSVI | Reel | |||||
0In Stock | Si | SMD/SMT | SOT-23F-3 | P-Channel | 1 Channel | 20 V | 3.9 A | 93 mOhms | - 8 V, 6 V | 1 V | 4.6 nC | - 55 C | + 150 C | 2 W | Enhancement | AEC-Q101 | U-MOSVI | Reel | ||||
0In Stock | Si | SMD/SMT | SOT-23F-3 | P-Channel | 1 Channel | 20 V | 6 A | 29.8 mOhms | - 8 V, 6 V | 1 V | 12.8 nC | + 150 C | 2 W | Enhancement | AEC-Q101 | U-MOSVI | Reel | |||||
0In Stock | Si | SMD/SMT | SOT-363-6 | P-Channel | 2 Channel | 20 V | 250 mA | 1.4 Ohms | 10 V | 1 V | + 150 C | 285 mW | Enhancement | U-MOSVII | Reel | |||||||
0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 40 V | 150 A | 850 uOhms | 20 V | 1.4 V | 103 nC | - 55 C | + 175 C | 170 W | Enhancement | U-MOSIX-H | Reel | |||||
0In Stock | Si | SMD/SMT | CST3-3 | N-Channel | 1 Channel | 30 V | 100 mA | 3.6 Ohms | 20 V | 800 mV | - 55 C | + 150 C | 100 mW | Enhancement | U-MOSIII | Reel | ||||||
Mfr: TK12E80W,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 800V 1400pF 23nC 11.5A 165W | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 11.5 A | 380 mOhms | 20 V | 3 V | 23 nC | - 55 C | + 150 C | 165 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: SSM3J351R,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Small-signal MOSFET ID -3.5A, -60V VDSS | 0In Stock | Si | SMD/SMT | SOT-23F-3 | P-Channel | 1 Channel | 60 V | 3.5 A | 164 mOhms | - 20 V, 10 V | 800 mV | 15.1 nC | - 55 C | + 150 C | 2 W | Enhancement | AEC-Q101 | U-MOSVI | Reel | |||
Mfr: TK160F10N1L,LQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs U-MOSVIII-H 100V 160A 122nC MOSFET | 0In Stock | Si | SMD/SMT | TO-220SMW-3 | N-Channel | 1 Channel | 100 V | 160 A | 2 mOhms | 20 V | 2.5 V | 122 nC | + 175 C | 375 W | Enhancement | AEC-Q101 | U-MOSVIII-H | Reel | ||||
Mfr: SSM3J112TU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Small-signal MOSFET ID=-1.1A VDSS=-30V | 0In Stock | Si | SMD/SMT | UFM-3 | P-Channel | 1 Channel | 30 V | 1.1 A | 310 mOhms | 20 V | 1.8 V | + 150 C | 800 mW | Enhancement | AEC-Q101 | Reel | ||||||
Mfr: SSM6J216FE,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=--4.8A VDSS=-12V | 0In Stock | Si | SMD/SMT | SOT-563-6 | P-Channel | 1 Channel | 12 V | 4.8 A | 26 mOhms | 8 V | 1 V | 12.7 nC | - 55 C | + 150 C | 700 mW | Enhancement | U-MOSVI | Reel | ||||
Mfr: SSM6N35AFU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=.25A VDSS=20V | 0In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 2 Channel | 20 V | 250 mA | 750 mOhms, 750 mOhms | 10 V | 350 mV | 340 pC | - 55 C | + 150 C | 285 mW | Enhancement | U-MOSIII | Reel | ||||
Mfr: TPW1R005PL,L1Q TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs POWER MOSFET TRANSISTOR PD=170W | 0In Stock | Si | SMD/SMT | DSOP-8 | N-Channel | 1 Channel | 45 V | 300 A | 1.65 mOhms | 20 V | 1.4 V | 122 nC | - 55 C | + 175 C | 170 W | Enhancement | U-MOSIX-H | Reel | ||||
0In Stock | Si | SMD/SMT | SOT-323-3 | N-Channel | 1 Channel | 30 V | 100 mA | 3.6 Ohms | 20 V | 800 mV | - 55 C | + 150 C | 150 mW | Enhancement | U-MOSIII | Reel | ||||||
0In Stock | Si | N-Channel | 1 Channel | U-MOSIII | Reel | |||||||||||||||||
Mfr: TPH2R608NH,L1Q TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Power MOSFET N-Channel Single | 0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 75 V | 168 A | 2.6 mOhms | 20 V | 2 V | 72 nC | - 55 C | + 150 C | 142 W | Enhancement | U-MOSVIII-H | Reel | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 25 A | 105 mOhms | 30 V | 2.5 V | 40 nC | - 55 C | + 150 C | 180 W | Enhancement | DTMOSIV-H | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 25 A | 105 mOhms | 30 V | 2.5 V | 40 nC | - 55 C | + 150 C | 180 W | Enhancement | DTMOSIV-H | Tube |